A high-linearity and temperature-insensitive 2,4 GHz power amplifier (PA) with dynamic-bias control is realized in a SiGe HBT technology with 0.9 pm emitter width. Due to the bias linearization, the PldB of 27 dBm is only 0.5 dB smaller than PSsr, which i s the record low to the best of our knowledge. With simple temperature-insensitive bias, the total current deviations from the room temperature are smaller than 6% and 10% at the linear Pa,, (24/20 dBm) for 802.1Ib and 802.11g, respectively at the test temperature from 0 "C to 85 'C. The integrated power detector has a wide dynamic range of 20 dB. The DC current can be reduced to 53 mA and the power-added-efficiency (PAE) can be enhanced up to 3 times at low Pa"* level under dynamic-bias control operation, and meanwhile the 802.11 blg linearity requirements are achieved. This design is most suitable for the future 802.11n application due to its high linearity.
The large-signal and small-signal coupling effects of dual SiGe power amplifiers (PAs) on a single chip for 802.11n Multiple Input Multiple Output (MIMO) applications are demonstrated for the first time. Deep trench isolation and grounded guard ring are used for crosstalk isolation at both transistor and circuit levels. The equivalent small-signal coupling at 2.45 GHz between two PAs is -30 dB. The PA delivers 18.1 dBm and 16.6 dBm with 3% EVM (OFDM, 64-QAM) in single and dual PA operation modes, respectively. The EVM degradation becomes severe as the relative interfering power level increases.
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