We investigate variable optical delay of a microwave modulated optical beam in semiconductor optical amplifier/absorber waveguides with population oscillation (PO) and nearly degenerate four-wave-mixing (NDFWM) effects. An optical delay variable between 0 and 160 ps with a 1.0 GHz bandwidth is achieved in an InGaAsP/InP semiconductor optical amplifier (SOA) and shown to be electrically and optically controllable. An analytical model of optical delay is developed and found to agree well with the experimental data. Based on this model, we obtain design criteria to optimize the delay-bandwidth product of the optical delay in semiconductor optical amplifiers and absorbers.
Amplified spontaneous emission (ASE) measurements of a quantum-well coupled quantum-dot (QW–QD) laser are investigated in our experimental study. Fabry–Perot ASE spectrum taken below threshold of this device allows the extraction of gain, index of refraction change, and linewidth enhancement factor. Our experimental study includes continuous wave and pulsed measurements. The QW–QD laser consists of an auxiliary QW which assists in carrier collection while tunneling of carriers takes place from the well to the dot region. Our experimental analysis reveals a low linewidth enhancement factor of 0.15 over a flat spectrum for these GaAs–InGaAs–InAs QW–QD lasers.
Room temperature quantum-well semiconductor optical amplifier with large input power is utilized in both the absorption and gain regime as an optical group delay and advance (slow and fast light), respectively. Material resonance created by coherent population oscillation and four wave mixing is tuned by electrical injection current, which in turn controls the speed of light. The four-wave mixing and population oscillation model explains the slow-to-fast light switching. Experimentally, the scheme achieves 200 degrees phase shift at 1 GHz, which corresponds to 0.56 delay-bandwidth product. The device presents a feasible building block of a multi-bit optical buffer system.
We have demonstrated both slow light in the absorption regime and fast light in the gain regime of a 1.55 microm quantum-dot semiconductor optical amplifier at room temperature. The theory with coherent population oscillations and four-wave mixing effects agrees well with the experimental results. We have observed a larger phase delay at the excited state than that at the ground state transition, likely due to the higher gain and smaller saturation power of the excited state.
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