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It has been demonstrated that apart from the known compounds YbVO 4 and Yb 8 V 2 O 17 , a substitutive solid solution is also formed in the binary oxide system V 2 O 5 -Yb 2 O 3 . This solid solution is characterized by limited solubility of vanadium(V) oxide in the crystal lattice of ytterbium oxide, and its general formula is Yb 2-5x h 2x V 3x O 3 , where 0.00 \ x \ 0.1667. The new solid solution was obtained from the mixtures of V 2 O 5 and Yb 2 O 3 oxides, containing vanadium(V) oxide in the amounts not exceeding 30 mol%, by high-energy ball milling in a planetary ball mill. The solid solution obtained was characterized using the methods XRD, DTA-TG, SEM, IR and UV-Vis-DR. It was found to crystallize in cubic system and to show a structure of Yb 2 O 3 . This solid solution was stable in air atmosphere at least up to * 800°C, and the temperature of its decomposition decreased with increasing x, so with increasing degree of Yb 3? replacement with V 5? in the crystal lattice of Yb 2 O 3 . The energy gap estimated for this solid solution varied from * 2.5 eV for x = 0.0322 to * 2.6 eV for x = 0.1176, which means that this new solid solution is a semiconductor.

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The study shows the advisability of using a mechanochemical synthesis method, based on a high-energy planetary ball milling, to a modification of barium titanate by a vanadium doping. This method improves useful properties of BaTi 0.95 V 0.05 O 3 as a capacitor material. It has a high value of electric permittivity ε in the wide range of temperature and low dielectric losses ε as well as a low electrical conductivity.