Organosilicon films ͑Si:O:C:H͒ have the potential to replace SiO 2 as a lower dielectric constant microelectronic interconnection layer. The structure of Si:O:C:H films was characterized by 1 H, 13 C, and 29 Si solid-state nuclear magnetic resonance ͑NMR͒ and also by X-ray photoelectron and Fourier transform infrared spectroscopies. Spin-coated hydrogen silsesquioxane, methyl silsesquioxane, and surface-modified nanoporous silica films were observed to be more homogeneous in structure than films grown by chemical vapor deposition ͑CVD͒. The CVD films were deposited from N 2 O mixed with either tetramethylsilane, a mixture of tetramethylsilane and silane, trimethylsilane, or methylsilane. The various gas mixtures altered the degree of oxidation and hydrogenation in the resulting films, confirming that the composition of Si:O:C:H can be readily adjusted by CVD. Of all the characterization methods, the 29 Si NMR was most readily able to distinguish differences between the Si:O:C:H films, resolving up to twelve distinct bonding environments. These same bonding configurations are also found in bulk organosilicate glasses. In all films studied, 13 C NMR reveals that methyl is the primary bonding configuration for carbon and no sp 2 -bonded carbon was detected.
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