The stoichiometry of Ge∕Si islands grown on Si(111) substrates at temperatures ranging from 460to560°C was investigated by x-ray photoemission electron microscopy (XPEEM). By developing a specific analytical framework, quantitative information on the surface Ge∕Si stoichiometry was extracted from laterally resolved XPEEM Si 2p and Ge 3d spectra, exploiting the chemical sensitivity of the technique. Our data show the existence of a correlation between the base area of the self-assembled islands and their average surface Si content: the larger the lateral dimensions of the 3D structures, the higher their relative Si concentration. The deposition temperature determines the characteristics of this relation, pointing to the thermal activation of kinetic diffusion processes.

The controlled positioning of germanium (Ge) islands on silicon(111) without lithographic patterning was studied. The step-bunched (SB) silicon(111) surfaces were used as templates. Scanning tunneling microscope images showed that the Ge islands were regularly spaced. The results show an ordered distribution of equally spaced rows of islands on the wide terraces of SB substrates

X-ray photoemission electron microscopy (XPEEM) is used to investigate the chemical composition of Ge/Si individual islands obtained by depositing Ge on Si(111) substrates in the temperature range 460–560 °C. We are able to correlate specific island shapes with a definite chemical contrast in XPEEM images, at each given temperature. In particular, strained triangular islands exhibit a Si surface content of 5%–20%, whereas it grows up to 30%–40% for “atoll-like” structures. The island’s stage of evolution is shown to be correlated with its surface composition. Finally, by plotting intensity contour maps, we find that island centers are rich in Si.

No abstract