Composition of Ge(Si) islands in the growth of Ge on Si(111)

Ratto, Fulvio; Rosei, Federico; Locatelli, Andrea; Cherifi, S.; Fontana, Stefano; Heun, S.; Szkutnik, Pierre-David; Sgarlata, A.; Crescenzi, M. De; Motta, Nunzio

doi:10.1063/1.1758304

Cited by 42 publications

(42 citation statements)

References 26 publications

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“…14,15 XPEEM was also employed to determine the local stoichiometry of the topmost layers of Ge(Si) islands on Si(111), correlating the island composition to its shape. 16,17 In the following, we report some of the most recent work on chemical imaging, illustrating the methods made available by the SPELEEM.…”

Section: Applicationsmentioning

confidence: 98%

Photoemission electron microscopy with chemical sensitivity: SPELEEM methods and applications

Locatelli

Aballe

Menteş

et al. 2006

Surface & Interface Analysis

159

139

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The instrumentation for synchrotron radiation X-ray photoemission electron microscopy (XPEEM) has recently undergone significant improvements, finding application in diverse fields such as magnetism, chemistry, surface science and nanostructure characterization. The spectroscopic photoemission and low energy electron microscope (SPELEEM) operational at the 'Nanospectroscopy beamline' at the Elettra synchrotron facility combines structural and spectroscopic analysis methods in a single instrument, exploiting the inherent chemical sensitivity of X rays. The SPELEEM reaches an energy resolution of 0.2 eV and a lateral resolution of few tens of nanometers in XPEEM. Selected results are used to illustrate the spectro-microscopic capabilities of the SPELEEM, and the usefulness of available complementary methods such as low energy electron microscopy (LEEM) and micro-spot low energy electron diffraction (LEED).

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Section: Applicationsmentioning

confidence: 98%

Photoemission electron microscopy with chemical sensitivity: SPELEEM methods and applications

Locatelli

Aballe

Menteş

et al. 2006

Surface & Interface Analysis

159

139

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“…the degree of intermixing and the periodicity, and a calculation that does not build in prejudices would require molecular dynamics and a very large supercell. The characteristics of the Si-Ge interface are under investigation by several experimental groups [26,27]. One approach that is presently feasible is to study simple limiting cases.…”

Section: Computational Detailsmentioning

confidence: 99%

Electronic structure of the Ge(111)‐5 × 5 wetting layer on Si(111)‐7 × 7

Psiachos¹,

Stott

2007

Physica Status Solidi (b)

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This work reports an ab initio study of the Ge(111)-5 × 5 reconstruction, which forms on top of a Si(111)-7 × 7 substrate. Detailed descriptions of the structural and electronic properties of this surface, obtained from density-functional calculations, are presented and analyzed. Many similarities with the structural and electronic -electronic properties of related structures such as Si(111)-7 × 7 and Si(111)-5 × 5 were found, in particular the similar localisation properties of the eigenstates around the fermi level, the non-zero density of states at the fermi level, a larger charge density associated with the dangling bonds on the faulted half cell compared with those of the unfaulted half, and the structural relaxations of key surface atoms and bonds, although the magnitudes of these relaxations are somewhat smaller than has been calculated for Si(111)-7 × 7. The calculated charge density distribution is interpreted in terms of population analysis to obtain information on the bonding mechanisms at the surface.

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“…For example, the efficiency of a QD-based laser depends on the uniformity of electronic states separation within nanostructures across a dense array. The electronic structure of a QD depends on its size, shape, chemical composition and cristallinity, which in turn are all linked to its size [22,23]. The size evolution of a 3D nucleus generally depends on its local environment, i.e.…”

Section: 'Natural' Versus 'Assisted' Self-organizationmentioning

confidence: 99%