Electronic structure of the Ge(111)‐5 × 5 wetting layer on Si(111)‐7 × 7

Psiachos, D.; Stott, M. J.

doi:10.1002/pssb.200743047

Cited by 4 publications

(4 citation statements)

References 36 publications

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“…The structural analogy with the Si(111)-(7 × 7) surface discussed above thus translates into an analogy of the electronic properties. Both experimental studies 23,34,35 and recent ab initio calculations 36 indicate that the (5 × 5) surface is metallic, which offers the opportunity to probe the electron-phonon interaction.…”

Section: Methodsmentioning

confidence: 99%

Electron-phonon coupling on strained Ge/Si(111)-(5×5) surfaces

et al. 2012

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We investigate the structural and electronic properties of strained Ge/Si(111)-(5 × 5) surfaces by means of scanning tunneling microscopy and high-resolution angle-resolved photoemission spectroscopy. The homogeneous (5 × 5) reconstructed overlayers are characterized by three electronic surface states, similar to the Si( 111)-(7 × 7) surface. The dispersion of the dangling bond related surface state exhibits the same periodicity as that of the (5 × 5) reconstruction. Moreover, a careful analysis of the shape and width of this surface state provides striking evidence of electron-phonon coupling at low temperatures. By considering the spectral function within a simple Debye model, we determine both the Debye energy and the electron-phonon coupling strength. The latter value is further confirmed by analyzing the temperature-dependent phonon broadening of the dangling bond related surface state linewidth.

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Section: Methodsmentioning

confidence: 99%

Electron-phonon coupling on strained Ge/Si(111)-(5×5) surfaces

et al. 2012

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“…Earlier work [31] found only small variations in these quantities among different surface atoms of the clean Ge(5 × 5) system, even though there were definite qualitative trends consistent with other forms of analysis, and large effects were not found for the In on Ge(5 × 5) system. The gross charges were all found to be less than the free-atom value of 3.0 indicating electron transfer from the In towards the Ge surface atom(s), in accordance with the electronegativity difference [37,38].…”

Section: Bondingmentioning

confidence: 42%

“…More details about the setup of the structure, including the relaxed structure of the clean surface are given elsewhere [31].…”

Section: Computational Detailsmentioning

confidence: 99%

Ab initio study of indium clusters on the Ge(5 × 5) wetting layer of Si(111)‐7 × 7

Psiachos¹,

Stott

2008

Physica Status Solidi (b)

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An ab initio study of In adsorbed on the Ge(111)‐5 × 5 wetting layer, which forms on top of a Si(111)‐7 × 7 substrate, is reported. A recent experiment showed that small In clusters form on this surface with some regularity but their exact size and structure are still unknown. Results are presented of a detailed investigation of the structural and electronic properties of a single adsorbed In atom and small candidate In clusters, carried out using density‐functional calculations. Using density difference plots and population analysis, the mechanisms of bonding for different In structures are explained. Comparison of total energies shows that for a single In atom the faulted half cell is marginally preferred to the unfaulted half, and little tendency for clustering of In is found for low coverages. Both of these conclusions seem to be at odds with the experimental results and possible explanations are discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Spectrum 1, which was obtained near the top, showed a band gap, indicative of semiconducting characteristics, 8) while the STS spectrum obtained on the top surface around its center (not shown) exhibited a finite DOS near the Fermi energy, indicative of metallic characteristics. 17) The DOS at approximately 0.7 and 1.5 eV in spectrum 1 are likely to stem from surface and bulk states, respectively. As the measurement point goes down, the DOS of the surface and bulk states shifted to the lower and higher energy sides, respectively.…”

mentioning

confidence: 99%

Scanning Tunneling Microscopy and Spectroscopy Study of a Steep Facet Surface on Ge Nanocrystal Grown on Si(111)

Suto¹,

Murata²,

Matsumoto³

et al. 2009

Appl. Phys. Express

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The facet surface of a Ge nanocrystal prepared on Si(111) was investigated by scanning tunneling microscopy and spectroscopy (STM/ STS) using a metal-coated carbon nanotube tip. Because of the small radius and high aspect ratio of the tip, we observed a steep facet surface in detail. It was revealed that the surface formed a Ge(105) 1Â2 structure. STS spectra obtained on the facet surface showed density of states (DOS) originating from the surface and bulk states, which shifted depending on the height. First-principles calculation revealed that the shift arose from the intermixing of Si with Ge.

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Electronic structure of the Ge(111)‐5 × 5 wetting layer on Si(111)‐7 × 7

Cited by 4 publications

References 36 publications

Electron-phonon coupling on strained Ge/Si(111)-(5×5) surfaces

Electron-phonon coupling on strained Ge/Si(111)-(5×5) surfaces

Ab initio study of indium clusters on the Ge(5 × 5) wetting layer of Si(111)‐7 × 7

Scanning Tunneling Microscopy and Spectroscopy Study of a Steep Facet Surface on Ge Nanocrystal Grown on Si(111)

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