Carbon quantum dots (CQDs) have attracted much attention owing to their unique optical properties and a wide range of applications. The fabrication and control of CQDs with organic solubility and long-wavelength emission are still urgent issues to be addressed for their practical use in LEDs. Here, organic-soluble CQDs were produced at a high yield of ∼90% by a facile solvent engineering treatment of 1,3,6-trinitropyrene, which were simultaneously used as the nitrogen and carbon sources. The optical properties of the organic-soluble CQDs (o-CQDs) were investigated in nonpolar and polar solvents, films, and LED devices. The CQDs have a narrow size distribution around 2.66 nm, and can be dispersed in different organic solvents. Significantly, the as-prepared CQDs present an excitation-independent emission at 607 nm with fluorescence quantum yields (QYs) up to 65.93% in toluene solution. A pronounced solvent effect was observed and their strong absorption bands can be tuned in the whole visible region (400-750 nm) by changing the solvent. The CQDs in various solvents can emit bright, excitation-independent, long-wavelength fluorescence (orange to red). Furthermore, benefiting from the unique oil-solution properties, the as-prepared CQDs can be processed in thin film and device forms to meet the requirements of various applications, such as phosphor-based white-light LEDs. The color coordinate for these CQD modified LEDs is realized at (0.32, 0.31), which is close to pure white light (0.33, 0.33).
The reliability of high-power light-emitting-diode (LED) devices strongly depends on the die-attach quality because voids may increase junction temperature and total thermal resistance of LED devices. Die-attach material has a key role in the thermal management of high-power LED package by providing low-contact thermal resistance. Thermal and mechanical analyses were carried out by experiments and thermal simulation. The quantitative analysis results show that thermal resistance of die-attach layer (thermal resistance caused by die-attach material and voids in die-attach layer) plays an important role in total thermal resistance of high-power LED packaging according to the differential structure function of thermal transient characteristics. The increase of void fraction in die-attach layer causes the increases of thermal resistance of die-attach layer; the thermal resistance increased by 1.95 K/W when the void fraction increased to 62.45%. The voids also make an obvious influence on thermal stress and thermal strain of chip; the biggest thermal stress of chip was as high as 847.1 MPa compared to the 565.2 MPa when the void fraction increases from being void-free to 30% in the die-attach layer.
The heat centralization of high power light emitting diode becomes a challengeable issue by reason of the strong relationship between device reliability and operating temperature. The purpose of this work is to study the thermal behavior of light emitting diode device with graphene film transferred to the substrate surface. The experiment results show that junction temperature of the device with graphene film transferred to the alumina ceramic substrate surface is about 2.2°C lower. And the thermal resistance is low by 3.11 K/W compared to that of normal device. It is validated that graphene film can improve the thermal conductivity ability of the alumina ceramic substrate. Accordingly, the results are helpful in enhancing the performance and reliability of high power light emitting diode.
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