Quantum light sources in solid-state systems are of major interest as a basic ingredient for integrated quantum photonic technologies. The ability to tailor quantum emitters via site-selective defect engineering is essential for realizing scalable architectures. However, a major difficulty is that defects need to be controllably positioned within the material. Here, we overcome this challenge by controllably irradiating monolayer MoS 2 using a sub-nm focused helium ion beam to deterministically create defects. Subsequent encapsulation of the ion exposed MoS 2 flake with high-quality hBN reveals spectrally narrow emission lines that produce photons in the visible spectral range. Based on ab-initio calculations we interpret these emission lines as stemming from the recombination of highly localized electron–hole complexes at defect states generated by the local helium ion exposure. Our approach to deterministically write optically active defect states in a single transition metal dichalcogenide layer provides a platform for realizing exotic many-body systems, including coupled single-photon sources and interacting exciton lattices that may allow the exploration of Hubbard physics.

We demonstrate the growth and single-mode lasing operation of GaAs-AlGaAs core-multishell nanowires (NW) with radial single and multiple GaAs quantum wells (QWs) as active gain media. When subject to optical pumping lasing emission with distinct s-shaped input-output characteristics, linewidth narrowing and emission energies associated with the confined QWs are observed. Comparing the low temperature performance of QW NW laser structures having 7 coaxial QWs with a nominally identical structure having only a single QW shows that the threshold power density reduces several-fold, down to values as low as ∼2.4 kW/cm2 for the multiple QW NW laser. This confirms that the individual radial QWs are electronically weakly coupled and that epitaxial design can be used to optimize the gain characteristics of the devices. Temperature-dependent investigations show that lasing prevails up to 300 K, opening promising new avenues for efficient III–V semiconductor NW lasers with embedded low-dimensional gain media.

The activation and selective transformation of virtually inexhaustible or easy-to-generate chemicals like N, O, CO, CO, H, or methane gas to value-added products is a lively area of current research, because of its economic relevance as well as its huge ecological impact. Biologists and chemists have put forth a lot of effort toward understanding and modeling the mechanisms of biological small-molecule activation, and in several catalytic cycles proposed for nickel-containing enzymes, nickel(I) plays a key role. In recent years also in synthetic chemistry the huge potential of complex nickel(I) units for the activation and transformation of small molecules has been discovered and exploited. This Perspective highlights some representative examples of nickel(I)-based small-molecule activation, intending to establish awareness of the competencies and scope of nickel(I) compounds.

To combine the advantages of ultrafast femtosecond nano-optics with an on-chip communication scheme, optical signals with a frequency of several hundreds of THz need to be down-converted to coherent electronic signals propagating on-chip. So far, this has not been achieved because of the overall slow response time of nanoscale electronic circuits. Here, we demonstrate that 14 fs optical pulses in the near-infrared can drive electronic on-chip circuits with a prospective bandwidth up to 10 THz. The corresponding electronic pulses propagate in macroscopic striplines on a millimeter scale. We exploit femtosecond photoswitches based on asymmetric, nanoscale metal junctions to drive the pulses. The non-linear ultrafast response is based on a plasmonically enhanced, multiphoton absorption resulting in a field emission of ballistic hot electrons propagating across the nanoscale junctions. Our results pave the way towards femtosecond electronics integrated in wafer-scale THz circuits.

Over the last few years deep artificial neural networks (DNNs) have very successfully been used in numerical simulations for a wide variety of computational problems including computer vision, image classification, speech recognition, natural language processing, as well as computational advertisement. In addition, it has recently been proposed to approximate solutions of partial differential equations (PDEs) by means of stochastic learning problems involving DNNs. There are now also a few rigorous mathematical results in the scientific literature which provide error estimates for such deep learning based approximation methods for PDEs. All of these articles provide spatial error estimates for neural network approximations for PDEs but do not provide error estimates for the entire space-time error for the 1 considered neural network approximations. It is the subject of the main result of this article to provide space-time error estimates for DNN approximations of Euler approximations of certain perturbed differential equations. Our proof of this result is based (i) on a certain artificial neural network (ANN) calculus and (ii) on ANN approximation results for products of the form r0, T s ˆRd Q pt, xq Þ Ñ tx P R d where T P p0, 8q, d P N, which we both develop within this article.

We demonstrate that prestructured metal nanogaps can be shaped on-chip to below 10 nm by femtosecond laser ablation. We explore the plasmonic properties and the nonlinear photocurrent characteristics of the formed tunnel junctions. The photocurrent can be tuned from multiphoton absorption toward the laser-induced strong-field tunneling regime in the nanogaps. We demonstrate that a unipolar ballistic electron current is achieved by designing the plasmonic junctions to be asymmetric, which allows ultrafast electronics on the nanometer scale.

Reduced CO species are key intermediates in a variety of natural and synthetic processes. In the majority of systems, however, they elude isolation or characterisation owing to high reactivity or limited accessibility (heterogeneous systems), and their formulations thus often remain uncertain or are based on calculations only. We herein report on a Ni-CO complex that is unique in many ways. While its structural and electronic features help understand the CO -bound state in Ni,Fe carbon monoxide dehydrogenases, its reactivity sheds light on how CO can be converted into CO/CO by nickel complexes. In addition, the complex was generated by a rare example of formate β-deprotonation, a mechanistic step relevant to the nickel-catalysed conversion of H CO at electrodes and formate oxidation in formate dehydrogenases.

AbstractThis review aims to provide an overview over recent developments of light-driven currents with a focus on their application to layered van der Waals materials. In topological and spin-orbit dominated van der Waals materials helicity-driven and light-field-driven currents are relevant for nanophotonic applications from ultrafast detectors to on-chip current generators. The photon helicity allows addressing chiral and non-trivial surface states in topological systems, but also the valley degree of freedom in two-dimensional van der Waals materials. The underlying spin-orbit interactions break the spatiotemporal electrodynamic symmetries, such that directed currents can emerge after an ultrafast laser excitation. Equally, the light-field of few-cycle optical pulses can coherently drive the transport of charge carriers with sub-cycle precision by generating strong and directed electric fields on the atomic scale. Ultrafast light-driven currents may open up novel perspectives at the interface between photonics and ultrafast electronics.