Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects.
A unique growth scheme is demonstrated to realize ultrathin GaAs nanowires on Si with sizes down to the sub-10 nm regime. While this scheme preserves the bulk-like crystal properties, correlated optical experiments reveal huge blueshifted photo-luminescence (up to ≈100 meV) with decreasing nanowire cross-section, demonstrating very strong quantum confinement effects.
We demonstrate the growth and single-mode lasing operation of GaAs-AlGaAs core-multishell nanowires (NW) with radial single and multiple GaAs quantum wells (QWs) as active gain media. When subject to optical pumping lasing emission with distinct s-shaped input-output characteristics, linewidth narrowing and emission energies associated with the confined QWs are observed. Comparing the low temperature performance of QW NW laser structures having 7 coaxial QWs with a nominally identical structure having only a single QW shows that the threshold power density reduces several-fold, down to values as low as ∼2.4 kW/cm2 for the multiple QW NW laser. This confirms that the individual radial QWs are electronically weakly coupled and that epitaxial design can be used to optimize the gain characteristics of the devices. Temperature-dependent investigations show that lasing prevails up to 300 K, opening promising new avenues for efficient III–V semiconductor NW lasers with embedded low-dimensional gain media.
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