The behaviour of As‐related defects in SI (semi‐insulating) GaAs are studied from the viewpoint of the origination of As‐related precipitates, generation and evolution of EL2 during postgrowth and the possible defect interactions involved EL2 variation under As overpressure annealing. The precipitates were identified as elemental As and As‐rich GaAs polycrystalline grains and their features depend on the growth process. A defect interaction model has been proposed on the generation/annihilation of EL2 assigned as AsGa VAs VGa complex respect to non‐stoichiometry such as Asi VGa and VAs.
, 4 niodified low pressure in-situ synthesis LEC rnet'hod of growing undopod S I (semi-insulating) GaAs crystals has bcen established. The key points for controlling melt composition and As evaporation diiririg synthesis and growth have been described. Using this novel approach, crystals are able t o be grown from the nominal melt composition in the range of 0.491 -0.499 As fraction with high reproducibility. Some characteristics of the nndoped SI crystals grown by the present work including electrical properties, dislocation density, carbon arid EL2 coilcentrations arid thermal anriea,ling effects have been studied.
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