Strained bulk HgTe is a three-dimensional topological insulator, whose surface electrons have a high mobility ( $ 30 000 cm 2 =Vs), while its bulk is effectively free of mobile charge carriers. These properties enable a study of transport through its unconventional surface states without being hindered by a parallel bulk conductance. Here, we show transport experiments on HgTe-based Josephson junctions to investigate the appearance of the predicted Majorana states at the interface between a topological insulator and a superconductor. Interestingly, we observe a dissipationless supercurrent flow through the topological surface states of HgTe. The current-voltage characteristics are hysteretic at temperatures below 1 K, with critical supercurrents of several microamperes. Moreover, we observe a magnetic-field-induced Fraunhofer pattern of the critical supercurrent, indicating a dominant 2-periodic Josephson effect in the unconventional surface states. Our results show that strained bulk HgTe is a promising material system to get a better understanding of the Josephson effect in topological surface states, and to search for the manifestation of zero-energy Majorana states in transport experiments.
ith their experimental verification in 2007, topological insulators (TIs) render a new and fascinating class of materials 1 . A band inversion in the bulk of three-dimensional (3D) TIs creates a 2D metallic subspace at the physical surface of these 3D crystals. The charge carriers of the 2D metal (Dirac electrons) have their spin locked to the momentum, which leads to a topological protection of the subspace 2-4 . This intrinsic quantumspin texture enables the realization of novel technologies, which range from spintronics to quantum computing. Particularly in combination with superconductors (S), TIs promise new quantum devices. Networks of TI nanostructures in proximity to superconductive islands have been predicted to host non-Abelian Majorana modes at the ends and at the crossing points of the networks [5][6][7][8] . Braiding of these elusive modes, that is, exchanging the position of Majorana modes in a 2D plane (Supplementary Fig. 2), resembles topologically protected quantum operations in the Majorana platform. Topological quantum bits (qubits), which use Majorana modes 9,10 to store and process quantum information, are expected to compute fault tolerantly with minimal need for error correction [11][12][13][14] .Topological qubits require high-quality (multi-terminal) Josephson junctions (JJs) 12,15,16 . The simplest type of such a JJ is a two-terminal S-TI-S device (Fig. 1). The Josephson effect 17 allows for an electrical current to conduct dissipationlessly across a lateral junction of two close-by superconductive electrodes separated by a weak link of non-superconductive material. In conventional lateral JJs, the supercurrent is mediated by Andreev bound states (ABS), which effectively transport Cooper pairs across the weak link 18 . In S-TI-S junctions the Dirac system forms a weak link. The quantum spin texture of the Dirac system causes an additional transport channel, known as Majorana bound states (MBS), which adds to conventional ABS 19 . In contrast to ABS, MBS facilitate single-electron transport across the weak link 20 . The contribution of MBS to a supercurrent can be detected via Shapiro response measurements 19,[21][22][23][24] . MBS manifest themselves by a suppression of odd Shapiro steps in low-temperature transport experiments under radio frequency (RF) radiation, due to their 4π-periodic energy-phase dependency 25 .To create and preserve MBS in S-TI-S junctions, the Dirac system in between the superconductive electrodes needs to be conserved (Fig. 1b). Surface oxidation 26,27 and reactions with water molecules at ambient conditions 28 can lead to additional non-topological states at the surface of (Bi,Sb)-based TIs. These superimpose locally with the Dirac system, and thus allow for additional scattering events that could destroy the MBS. To avoid surface degradation in (Bi,Sb)-based TIs, an in situ deposited protective AlO x capping layer on top of the topological surface is often employed 29,30 . Although such capping layers protect the topological surface states for ex situ fabricat...
New three-dimensional (3D) topological phases can emerge in superlattices containing constituents of known two-dimensional topologies. Here we demonstrate that stoichiometric Bi1Te1, which is a natural superlattice of alternating two Bi2Te3 quintuple layers and one Bi bilayer, is a dual 3D topological insulator where a weak topological insulator phase and topological crystalline insulator phase appear simultaneously. By density functional theory, we find indices (0;001) and a non-zero mirror Chern number. We have synthesized Bi1Te1 by molecular beam epitaxy and found evidence for its topological crystalline and weak topological character by spin- and angle-resolved photoemission spectroscopy. The dual topology opens the possibility to gap the differently protected metallic surface states on different surfaces independently by breaking the respective symmetries, for example, by magnetic field on one surface and by strain on another surface.
Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defects at the surface of a (Bi0.53Sb0.47)2Te3 topological insulator thin film. We find the largest localized voltage drop to be located at domain boundaries in the topological insulator film, with a resistivity about four times higher than that of a step edge. Furthermore, we resolve resistivity dipoles located around nanoscale voids in the sample surface. The influence of such defects on the resistance of the topological surface state is analysed by means of a resistor network model. The effect resulting from the voids is found to be small compared with the other defects.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.