2019
DOI: 10.1038/s41565-019-0506-y
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Selective area growth and stencil lithography for in situ fabricated quantum devices

Abstract: ith their experimental verification in 2007, topological insulators (TIs) render a new and fascinating class of materials 1 . A band inversion in the bulk of three-dimensional (3D) TIs creates a 2D metallic subspace at the physical surface of these 3D crystals. The charge carriers of the 2D metal (Dirac electrons) have their spin locked to the momentum, which leads to a topological protection of the subspace 2-4 . This intrinsic quantumspin texture enables the realization of novel technologies, which range fro… Show more

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Cited by 92 publications
(142 citation statements)
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References 44 publications
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“…Deposition of different materials from the various directions further increases the possible functionality. Shadow epitaxy also applies to planar structures such as selective area grown nanostructures [ 13,14,32 ] or vapor–liquid–solid NWs grown parallel to the substrate [ 29 ] (Section 9, Supporting Information). Finally, we discuss the potential for large‐scale fabrication using vertical device structures in Section 10, Supporting Information.…”
Section: Figurementioning
confidence: 99%
See 1 more Smart Citation
“…Deposition of different materials from the various directions further increases the possible functionality. Shadow epitaxy also applies to planar structures such as selective area grown nanostructures [ 13,14,32 ] or vapor–liquid–solid NWs grown parallel to the substrate [ 29 ] (Section 9, Supporting Information). Finally, we discuss the potential for large‐scale fabrication using vertical device structures in Section 10, Supporting Information.…”
Section: Figurementioning
confidence: 99%
“…Finally, we show that the platform is compatible with both half‐shell and full‐shell hybrid geometries and allows for functional devices to be encapsulated in situ with passivating dielectrics, thus protecting sensitive elements. The flexibility of the shadow structure engineering, the realization of key geometries not possible with previous shadow techniques, [ 29,30,32 ] the demonstrated ability to explore new materials and the significant increase in device performance suggests that shadow epitaxy will become vital to future device optimization. While the focus here is on SE/SU hybrids, shadow epitaxy is equally applicable for any metal/SE/insulator combination, extending the scope to other applications where pristine surfaces and interfaces are key.…”
mentioning
confidence: 99%
“…On the experimental side, although nanowire network systems proximitized by superconductors have been investigated as a promising platform for topological quantum computation, the experiments are still limited to measuring two-terminal properties [38][39][40][41][42][43]. Multiterminal supercurrents were reported in graphene-based junctions [44], where a heating effect of coexisting disspative currents on supercurrent transport was mainly discussed.…”
Section: Introductionmentioning
confidence: 99%
“…First evidence of the existence of Majorana zero modes in topological material based Josephson junctions have been reported already. [16,[25][26][27] However, there still exist many challenges to realize topological Josephson junctions, therefore, clarifying the physical mechanism of proximity effect induced superconductivity in 3D TI materials is beneficial for advancing the field of topological quantum computing.…”
Section: Introductionmentioning
confidence: 99%