Manipulating stimulated-emission light in nanophotonic devices on scales smaller than their emission wavelengths to meet the requirements for optoelectronic integrations is a challenging but important step. Surface plasmon polaritons (SPPs) are one of the most promising candidates for sub-wavelength optical confinement. In this study, based on the principle of surface plasmon amplification by the stimulated emission of radiation (SPASER), III-Nitride-based plasmonic nanolaser with hybrid metal-oxidesemiconductor (MOS) structures is designed. Using geometrically elliptical nanostructures fabricated by nanoimprint lithography, elliptical nanolasers able to demonstrate single-mode and multimode lasing with an optical pumping power density as low as 0.3 kW cm −2 at room temperature and a quality Q factor of up to 123 at a wavelength of ≈490 nm are achieved. The ultralow lasing threshold is attributed to the SPP-coupling-induced strong electric-field-confinement in the elliptical MOS structures. In accordance with the theoretical and experimental results, the size and shape of the nanorod are the keys for manipulating hybridization of the plasmonic and photonic lasing modes in the SPASER. This finding provides innovative insight that will contribute to realizing a new generation of optoelectronic and information devices.
The spontaneous emission rate into Surface Plasmon Polariton (SPP) mode for the InGaN/GaN quantum well (QW) with SP coupling is presented taking into account the electron and hole band structures, the photon density of states, and evanescent fields of SPP. The optical properties of SP-enhanced InGaN QW structure with different QW layer number are investigated in detail by using the formula. It is observed that the energy of electron-hole pairs in the InGaN QW can be efficiently transferred into the SPP modes which will induce the significantly enhancement of the internal quantum efficiency (IQE) of SP-enhanced light emitting diodes (LEDs), especially for the original IQE in the range of 6%–25%. Furthermore, the distribution of electron and hole densities in each well layer can evidently affect the Purcell enhancement factor due to the distance dependence of the intensity of SP-QW coupling. The numerical results also indicate that the SP-enhanced LED can suppress the efficiency droop effect as long as the extraction efficiency of SPP mode is enough large.
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