Inverse photoresponse is discovered from phototransistors based on molybdenum disulfide (MoS ). The devices are capable of detecting photons with energy below the bandgap of MoS . Under the illumination of near-infrared (NIR) light at 980 and 1550 nm, negative photoresponses with short response time (50 ms) are observed for the first time. Upon visible-light illumination, the phototransistors exhibit positive photoresponse with ultrahigh responsivity on the order of 10 -10 A W owing to the photogating effect and charge trapping mechanism. Besides, the phototransistors can detect a weak visible-light signal with effective optical power as low as 17 picowatts (pW). A thermally induced photoresponse mechanism, the bolometric effect, is proposed as the cause of the negative photocurrent in the NIR regime. The thermal energy of the NIR radiation is transferred to the MoS crystal lattice, inducing lattice heating and resistance increase. This model is experimentally confirmed by low-temperature electrical measurements. The bolometric coefficient calculated from the measured transport current change with temperature is -33 nA K . These findings offer a new approach to develop sub-bandgap photodetectors and other novel optoelectronic devices based on 2D layered materials.

An optically addressed spatial light modulator (OASLM) can modulate the wavefront of a read light by displaying a phase pattern or a hologram configured by the intensity distribution of a write light. Using ZnO nanoparticles (NPs) as a novel photoconductor, a high-resolution OASLM was fabricated. A ZnO NP suspension was spin-coated on an indium tin oxide (ITO)-coated glass substrate and annealed to form a photosensitive layer. The device was characterized electrically and optically. The device was operated at low driving voltages in the transmission mode. Updatable recording of a diffraction grating up to 825 lp mm 21 with a diffraction efficiency (DE) of 0.05% and binary holograms with pixel sizes from 2 mm down to 0.72 mm were demonstrated using a 405 nm wavelength write laser and a 635 nm wavelength read laser.

Electronics based on solution-processable materials are promising for applications in many fields which stimulated enormous research interest in liquid-drying and pattern formation. However, assembling of structure with submicrometre/nanometre resolution through liquid process is very challenging. We show a simple method to rapidly generate polymer structures with deep-submicrometre-sized features over large areas. In this method, a solution film is dried on a substrate under a suspended flexible template with groove/ridge surface topography. Upon solvent evaporation, the solution splits in the grooves and forms capillary bridges between the template and substrate, which are firmly pinned by the edges of the template grooves. This groove pinning stabilizes the contact lines, thereby allowing the formation of fine patterned structures with high aspect ratios which were used to fabricate various functional materials and electronic devices. We also produced secondary self-assembled nano-stripe patterns with resolutions of about 50 nm on the primary lines.

Nanoparticle polymer composites have enabled material multifunctionalities that are difficult to obtain otherwise. A simple modification to a commercially available resin system enables a universal methodology to embed nanoparticles in resins via spatial, temporal, thermal, concentration, and chemical control parameters. Changes in nanoparticle density distribution are exploited to demonstrate dynamic optical and electronic properties that can be processed on‐demand, without the need for expensive equipment or cleanroom facilities. This strategy provides access to the control of optical (cooperative plasmonic effects), electronic (insulator to a conductor), and chemical parameters (multimetal patterning). Using the same composite resin system, the followings are fabricated: i) diffraction gratings with tuneable diffraction efficiencies (10–78% diffraction efficiencies), ii) organic electrochemical transistors with a low drive voltage, and iii) embedded electrodes in confined spaces for potential diagnostic applications.

Total plastic deformation in tunnels passing through weak and schistose rock mass consists of both time-independent and time-dependent deformations. The extent of this total deformation is heavily influenced by the rock mass deformability properties and in situ stress condition prevailing in the area. If in situ stress is not isotropic, the deformation magnitude is not only different along the longitudinal alignment but also along the periphery of the tunnel wall. This manuscript first evaluates the long-term plastic deformation records of three tunnel projects from the Nepal Himalaya and identifies interlink between the time-independent and time-dependent deformations using the convergence law proposed by Sulem et al. (Int J Rock Mech Min Sci Geomech 24(3):145-154, 1987a, Int J Rock Mech Min Sci Geomech 24 (3): 155-164, 1987b). Secondly, the manuscript attempts to establish a correlation between plastic deformations (tunnel strain) and rock mass deformable properties, support pressure and in situ stress conditions. Finally, patterns of time-independent and time-dependent plastic deformations are also evaluated and discussed. The long-term plastic deformation records of 24 tunnel sections representing four different rock types of three different headrace tunnel cases from Nepal Himalaya are extensively used in this endeavor. The authors believe that the proposed findings will be a step further in analysis of plastic deformations in tunnels passing through weak and schistose rock mass and along the anisotropic stress conditions.