We report here details of steady-state and time-resolved spectroscopy of excitonic dynamics for Janus transition metal dichalcogenide monolayers, including MoSSe and WSSe, which were synthesized by low-energy implantation of Se into transition metal disulfides. Absorbance and photoluminescence spectroscopic measurements determined the room-temperature exciton resonances for MoSSe and WSSe monolayers. Transient absorption measurements revealed that the excitons in Janus structures form faster than those in pristine transition metal dichalcogenides by about 30% due to their enhanced electron−phonon interaction by the built-in dipole moment. By combining steady-state photoluminescence quantum yield and time-resolved transient absorption measurements, we find that the exciton radiative recombination lifetime in Janus structures is significantly longer than in their pristine samples, supporting the predicted spatial separation of the electron and hole wave functions due to the built-in dipole moment. These results provide fundamental insight in the optical properties of Janus transition metal dichalcogenides.

We report observations of a strong thickness dependence for charge transfer (CT) from MoSe 2 to MoS 2 , as evidenced by transient absorption measurements. By time-resolving CT from MoSe 2 monolayers (1Ls) to MoS 2 flakes of varying thicknesses, including 1L, bilayer (2L), and trilayer (3L), we find that the CT time is several picoseconds in the 1L-MoSe 2 /3L-MoS 2 heterostructure, which is much longer than that of 1L-MoSe 2 /1L-MoS 2 and 1L-MoSe 2 /2L-MoS 2 heterostructures. In addition, the recombination lifetime of the interlayer excitons in the 1L/3L heterostructure is several times longer than that of 1L/1L and 1L/ 2L heterostructures, reaching 800 ps. Furthermore, we show that a prepulse can reduce the CT time and enhance the interlayer exciton recombination in the 1L/3L heterostructure. These findings illustrate that layer thickness can be an important parameter to control the CT property of van der Waals heterostructures. These experimental results also provide important information for further refining the understanding of the physical mechanisms of CT in van der Waals heterostructures.

We report three-pulse photodope-pump-probe measurements on photocarrier dynamics in semiconducting transition metal dichalcogenide monolayers of MoS 2 , WS 2 , MoSe 2 , and WSe 2 . The samples are fabricated by metal-organic chemical vapor deposition and mechanical exfoliation techniques and characterized by photoluminescence spectroscopy. In the time-resolved measurement, the samples are first photodoped by a prepulse, which injects background photocarriers of various densities. A pump pulse then injects photocarriers, whose dynamics is monitored by measuring a differential reflection of a time-delayed probe pulse. We found that the ultrafast decay component of the differential reflection signal, which has been widely reported before, shows minimal dependence on the background exciton density. This observation shows that a previously suggested carrier-trapping model cannot account for this component. The results thus further support an exciton-formation model that was previously proposed based on spectroscopic evidence.

We report an experimental study on charge transfer properties of mixed-dimensional heterostructures formed by zero-dimensional PbS quantum dots and two-dimensional transition metal dichalcogenides. Monolayers of MoSe 2 and MoS 2 were fabricated by mechanical exfoliation and chemical vapor deposition techniques, respectively. PbS quantum dots with diameters of 2.3 and 5 nm were synthesized by a hot-injection method and characterized by optical absorption spectroscopy and ultraviolet photoemission spectroscopy. The quantum dots were deposited on the MoS 2 and MoSe 2 monolayers to form heterostructures. Photoluminescence and transient absorption measurements were performed on the heterostructures as well as individual materials to reveal their photocarrier dynamics. We found that the holes excited in MoSe 2 can efficiently transfer to both 2.3-and 5-nm PbS quantum dots, while electrons in these quantum dots cannot transfer to MoSe 2 . Similar charge transfer properties were observed between MoS 2 and the 5-nm PbS quantum dots, while no charge transfer was observed between MoS 2 and the 2.3-nm quantum dots. These results provide useful information for understanding the physical mechanism of charge transfer in mixed-dimensional heterostructures and for developing PbS quantum-dot-based mixed-dimensional materials.

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