Boron delta-doped diamond structures have been synthesized using microwave plasma chemical vapor deposition, and fabricated into FET and gated Hall bar devices for assessment of the electrical characteristics. A detailed study of variable temperature Hall, conductivity and field-effect mobility measurements was completed. This was supported by Schrödinger-Poisson and relaxation time calculations based upon application of Fermi's golden rule. A two carrier-type model was developed with an activation energy of ~0.2 eV between the delta layer lowest subband with mobility ~1 cm 2 /Vs and the bulk valence band with high mobility. This new understanding of the transport of holes in such boron delta-doped structures has shown that although Hall mobility as high as 900 cm 2 /Vs was measured at room temperature, this dramatically overstates the actual useful performance of the device.a Corresponding author

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Silver sensitized germanium selenide/polymer bilevel resist system has been used to pattern structures in SiO2 on silicon. Using reactive sputter etching in an SF6 plasma for developing germanium selenide gives superior results compared to CF4 or CHF3 in terms of sensitivity; 500:1, contrast; 7, and sensitivity; 50 mJ/cm2 at 436 nm. By this method 1-μ lines and spaces and 1-μ contact holes have been defined in germanium selenide. These have been transferred into polymer and SiO2 using standard reactive sputter etching with O2 and CHF3, respectively.

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The 35CI n.q.r. spectra of a series of tin(lv) chloride adducts SnC14*2L [L = MeCN, CH,=CHCN, ButCN, PhCN' CH,(CN),, 1 ,2-C6H,(CN),, SMe,O, or tht (tetrahydrothiophen)] have been recorded at various temperatures and used to deduce whether these complexes are cis or trans. A trans structure is indicated for SnC14*2tht, cis structures for the remainder. When compared with other published n.q.r. and structural data, our results indicate that the 35CI n.q.r. frequencies are related to the Sn-CI bond lengths in such systems. The higher WI n.q.r. frequencies tend to be associated with the shorter bonds, though the frequencies also vary markedly with temperature.