The composite of CNT–Fe were made by mixing CNT and Fe powder with the variance of Fe starting from 3% and 5% weight. Then the sample is milling for 2 hours using High Energy Milling (HEM). The CNT-Fe Composite to be had done implantasion with nitrogen gas for 5 hour and 8 hour. The result of magnetic parameter of composite CNT-Fe3% and CNT-Fe5% with VSM (Vibrating Sample Magnetometer) method shows that the remanent magnetic (Mr) and saturation magnetic (Ms) increased, and the coersive magnetic (Hc) decreased with the increasing of weight percent of Fe. The result of electrical properties of composite CNT-Fe3% and CNT-Fe5% using LCR instrument indicated that conductivities value of composite CNT-Fe3% and MWCNT-Fe5% are increased with the increasing of Fe weight. The surface morphology of composite CNT-Fe3% and CNT-Fe5% was done with TEM (Transmition Electron Microscopy) with the result that Fe was had into CNT.
Telah dilakukan pembuatan lapisan tipis karbon-krom (C-Cr) pada permukaan Si. Pelapisan C-Cr pada permukaan Si merupakan eletrode dalam bentuk lapisan tipis. Pengukuran struktur kristal lapisan tipis C-Cr pada permukaan Si dilakukan dengan difraksi sinar-x, pola difraksi yang nampak yaitu puncak C dan Cr. Ukuran kristalit dan regangan lapisan tipis C-Cr yaitu 18,40 A dan regangan 17,78 %. Pengukuran sifat listrk pada pelapisan karbon-krom (C- Cr) dan tanpa pelapisan meliputi konduktansi dan kapasitansi. Dari hasil pengukuran menunjukkan konduktansi lapisan tipis C-Cr dan kapasitansi menurun dengan kenaikan frekuensi, begitu juga dalam bentuk pellet C-Cr dan substrat Si. Hasil analisis permukaan dengan SEM menunjukkan lapisan tipis C- Cr. Pengujian lapisan tipis ini dilakukan guna mengetahui terbentuknya lapian tipis C-Cr dengan ditemukannnya unsur C dan Cr pada permukaan substrat Si. Dari spektrum Raman diperoleh panjang gelombang pada puncak yaitu 538 cm- 1. Hal ini menunjukkan adanya interaksi antara C dan Cr, sehingga puncak yang nampak adalah puncak karbon.Kata kunci : Lapisan tipis, Difraksi sinar-x, Konduktasni, Permukaan, Raman.AbstractTo had been done to make thin film of C-Cr on Si surface. Deposition carbon-chrom ( C-Cr ) on Si surface was electrode shape in the thin film. The measurement ctystall structure thin film of C-Cr on Si surface tobe done was with x-ray diffraction which was C and Cr. The crystall size and strain of C-Cr thin film was 18.40 A and strain 17.78 %. The measurement electrical properties on deposition of C-Cr and without deposition as follow conductance and capacitance. The result indicated, that conductance of C-Cr thin film and capacitance decreased with increasing of frequence and also pellet shape of C- Cr and C substract. The result of surface morphology with SEM, indicate to had became of thin film C-Cr on the Si surface. The examine thin film tobe done for know what the thin film of C-Cr was shaped with find out C and Cr on the Si substrate surface. From Raman spectrum tobe find out wave number on the peak 520.56 cm-1, indication that interaction between C and Cr, so that peeak which visible was pek of C.Key word : Thin film, X-ray diffraction, Conductance, Surface, Raman
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