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(2012) Generic maximum power point tracking controller for small-scale wind turbines. Renewable Energy, 44. pp. 72-79.

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We describe an advanced 0.13pm CMOS technology platform optimized for density, performance, low power and analoghixed signal applications. Up to 8 levels of Copper interconnect with industries first true low-k dielectric (SiLK, k=2.7) [ l ] result in superior interconnect performance at aggressive pitches. A 2.28pm2 SRAM cell is manufactured with high yield by introducing elongated local interconnects on the contact level without increasing process complexity. Trench based embedded DRAM is offered for large area memory. Modular analog devices as well as passive components like resistors, MIM capacitors and intrinsic inductors are integrated. References(1) R. D. Goldblatt et al.: A High Performance 0.13 pm Copper BEOL Technology with Low-k Dielectric, IlTC 2000 (2) L.K. Han et al: A Modular 0.13pm BULK CMOS Technology for High performance and Low Power Applications, VLSI 2000, p. 12 (3) M. Armacost et al: A High Reliability Metal Insulator Metal Capacitor for 0,18 pm Copper Technology, IEDM 2000, p. 157 SiLK is a registixed trademark of The Dow Chemical Company 101 4-891 14-012-7/01 2001 Symposium on VLSI Technology Digest of Technical Papers

A reliable metal-insulator-metal (MIM) capacitor exceeding 250nF has been integrated into the copper/low-K backend of a high-performance 90nm SOI technology. The reduction of supply grid voltage transients has enhanced microprocessor performance by approximately 10% without increasing the chip area or power consumption.