IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
DOI: 10.1109/iedm.2005.1609269
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Application of on-chip MIM decoupling capacitor for 90nm SOI microprocessor

Abstract: A reliable metal-insulator-metal (MIM) capacitor exceeding 250nF has been integrated into the copper/low-K backend of a high-performance 90nm SOI technology. The reduction of supply grid voltage transients has enhanced microprocessor performance by approximately 10% without increasing the chip area or power consumption.

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Cited by 14 publications
(11 citation statements)
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“…This behavior occurs since the signal at the input of a distributed filter is degraded by the resistance and the input impedance of the filter , forming a voltage divider. To produce the duty cycle required for a specific DC voltage, consider the input impedance of the filter at DC (24) where , and are defined in (16), and is the DC component of the current load (6). The DC component of the signal at the input of the filter (including in Fig.…”
Section: ) Transfer Function Of a 3-d Filtermentioning
confidence: 99%
See 1 more Smart Citation
“…This behavior occurs since the signal at the input of a distributed filter is degraded by the resistance and the input impedance of the filter , forming a voltage divider. To produce the duty cycle required for a specific DC voltage, consider the input impedance of the filter at DC (24) where , and are defined in (16), and is the DC component of the current load (6). The DC component of the signal at the input of the filter (including in Fig.…”
Section: ) Transfer Function Of a 3-d Filtermentioning
confidence: 99%
“…11) is (27) where is the rms voltage of the input signal, is the effective output resistance of the power MOSFETs and , and is the input impedance of the filter network at (24). The output power at the load of the filter is…”
Section: B Power Losses Of Switching Converter With Distributed Filtermentioning
confidence: 99%
“…In [20], high performance ALD HfO2-Al2O3 laminate MIM capacitor is fabricated with high capacitance density of 12.8f F/μm 2 (for reference, at the 90nm node the capacitance density of CMOS capacitors can be estimated as εox/tox = 17.3f F/μm 2 , where εox is the dielectric constant and tox ≈ 20Å is the thickness of oxide). A successful implementation of large-area MIM capacitors (exceeding 250nF ) in the power grid of a 90nm SOI microprocessor, with up to 8f F/μm 2 capacitance density, is reported in [24]. A significant advantage of MIM decaps lies in their extremely low leakage: in [24], the leakage current for the 250nF MIM decaps is reported to be about 1.…”
Section: Introductionmentioning
confidence: 99%
“…A successful implementation of large-area MIM capacitors (exceeding 250nF ) in the power grid of a 90nm SOI microprocessor, with up to 8f F/μm 2 capacitance density, is reported in [24]. A significant advantage of MIM decaps lies in their extremely low leakage: in [24], the leakage current for the 250nF MIM decaps is reported to be about 1. Figure 2 shows an example with CMOS and MIM decaps in one tier of a 3D circuit.…”
Section: Introductionmentioning
confidence: 99%
“…One of the novel features of our work is that it optimizes the power supply network using both conventional CMOS decaps and MIM decap technology, illustrated in Figure 1, which has high capacitance density and low leakage current density [6]- [8]. However, since MIM decaps are built between layers of metal interconnects, they present routing blockages to nets that attempt to cross them, and therein lies the tradeoff.…”
mentioning
confidence: 99%