We report growth, fabrication, and device results of MoS 2 -based transistors and diodes implemented on a single 2D/3D material platform. The 2D/3D platform consists of a large-area MoS 2 thin film grown on SiO 2 /p-GaN substrates. Atomic force microscopy, scanning electron microscopy, and Raman spectroscopy were used to characterize the thickness and quality of the as-grown MoS 2 film, showing that the large-area MoS 2 nanosheet has a smooth surface morphology constituted by small grains. Starting from the same material, both top-gated MoS 2 field effect transistors and MoS 2 /SiO 2 /p-GaN heterojunction diodes were fabricated. The transistors exhibited a high on/off ratio of 10 5 , a subthreshold swing of 74 mV dec −1 , field effect mobility of 0.17 cm 2 V −1 s −1 , and distinctive current saturation characteristics. For the heterojunction diodes, current-rectifying characteristics were demonstrated with on-state current density of 29 A cm −2 and a current blocking property up to −25 V without breakdown. The reported transistors and diodes enabled by the same 2D/3D material stack present promising building blocks for constructing future nanoscale electronics.
Layered semiconductor molybdenum disulfide (MoS 2) has recently emerged as a promising material for flexible electronic and optoelectronic devices because of its finite bandgap and high degree of gate control. Here, we report a hydrogen fluoride (HF) passivation technique for improving the carrier mobility and interface quality of chemical vapor deposited monolayer MoS 2 on a SiO 2 /Si substrate. After passivation, the fabricated MoS 2 back-gate transistors demonstrate a more than double improvement in average electron mobility, a reduced gate hysteresis gap of 3 V, and a low interface trapped charge density of ∼5.8×10 11 cm −2. The improvements are attributed to the satisfied interface dangling bonds, thus a reduction of interface trap states and trapped charges. Surface x-ray photoelectron spectroscopy analysis and first-principles simulation were performed to verify the HF passivation effect. The results here highlight the necessity of a MoS 2 /dielectric passivation strategy and provides a viable route for enhancing the performance of MoS 2 nano-electronic devices.
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