Selectable Synthesis of 2-D MoS<sub>2</sub>and Its Electronic Devices: From Isolated Triangular Islands to Large-Area Continuous Thin Film

Cho, Wai Ching; Wu, Kam Lam; Yip, Pak San; Wang, Xinsheng; Chai, Yang; Lau, Kei May

doi:10.1109/tnano.2016.2524044

Cited by 14 publications

(15 citation statements)

References 38 publications

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“…Then the MoO 3 films were sulfurized at 500 °C for 20 min. It should be noted that we made great effort to find the optimized sulfurization temperature since MoO 3 will evaporate very quickly if the reaction temperature is too high during the heating of the reaction chamber. After sulfurization, 20 min annealing at 900 °C in the sulfur vapor was performed to improve the crystallinity of the MoS 2 .…”

Section: Resultsmentioning

confidence: 99%

Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

Shi

Chen

Zhang

et al. 2017

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in logic circuits and CMOS applications. In particular, mono layer MoS 2 has a direct band gap of 1.9 eV, which makes it promising for optoelectronics applications such as photode tector or light emission diode (LED). [2] To date, most experimental research focus on the 2D sem iconductors mechanically exfoliated from bulk material, sim ilar to the approach for graphene studies. This is because the mechanical exfoliation (mostly "scotch tape" method) not only enables a high quality single crystal 2D semiconductor sample with least defects, but also limits the fabrication steps in which the ultrathin 2D sample can be damaged or con taminated. High performance field effect transistors (FETs) based on exfoliated TMDCs have been fabricated and found to exhibit large On/Off current ratio (over 10 7 ), high elec tron mobility (exceeding 200 cm 2 V −1 s −1 ) and small cutoff current (less than 1 pA). [8,9]

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Section: Resultsmentioning

confidence: 99%

Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

Shi

Chen

Zhang

et al. 2017

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“…This process may require edge functionalization for graphene growth on noncatalytic surfaces. In general, 2D materials have a higher edge growth rate compared to cubic systems as clearly demonstrated in graphene and more recently for TMD materials …”

Section: D Materials: Production and Processingmentioning

confidence: 87%

Nonvolatile Memories Based on Graphene and Related 2D Materials

et al. 2019

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The pervasiveness of information technologies is generating an impressive amount of data, which need to be accessed very quickly. Nonvolatile memories (NVMs) are making inroads into high‐capacity storage to replace hard disk drives, fuelling the expansion of the global storage memory market. As silicon‐based flash memories are approaching their fundamental limit, vertical stacking of multiple memory cell layers, innovative device concepts, and novel materials are being investigated. In this context, emerging 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous, offer a host of physical and chemical properties, which could both improve existing memory technologies and enable the next generation of low‐cost, flexible, and wearable storage devices. Herein, an overview of graphene and related 2D materials (GRMs) in different types of NVM cells is provided, including resistive random‐access, flash, magnetic and phase‐change memories. The physical and chemical mechanisms underlying the switching of GRM‐based memory devices studied in the last decade are discussed. Although at this stage most of the proof‐of‐concept devices investigated do not compete with state‐of‐the‐art devices, a number of promising technological advancements have emerged. Here, the most relevant material properties and device structures are analyzed, emphasizing opportunities and challenges toward the realization of practical NVM devices.

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“…CVD-grown MoS2 has been synthesized via the sulfurization of Mo containing precursors, such as Mo [16], MoO2 [17][18][19][20] and MoO3 , among which the use of MoO3 powder as the precursor has remained the most popular method owing to the possibility of obtaining large area single crystal and also continuous films [41][42][43][44][45][46][47][48][49].In fact, in very recent work, Q. Wang et al [46] have employed a customized multisource CVD system to successfully demonstrate the wafer-scale growth of MoS2 using MoO3 as the precursor material. While these accomplishments are noteworthy, the poisonous nature (strong irritant and carcinogen according to GHS classification) and low evaporation temperature (350 °C) of MoO3 powder means that harmful exposure to this material is more likely, posing a serious health hazard situation.…”

Section: Introductionmentioning

confidence: 99%

CVD Synthesis of Intermediate State-Free, Large-Area and Continuous MoS2 via Single-Step Vapor-Phase Sulfurization of MoO2 Precursor

et al. 2021

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The low evaporation temperature and carcinogen classification of commonly used molybdenum trioxide (MoO3) precursor render it unsuitable for the safe and practical synthesis of molybdenum disulfide (MoS2). Furthermore, as evidenced by several experimental findings, the associated reaction constitutes a multistep process prone to the formation of uncontrolled amounts of intermediate MoS2−yOy phase mixed with the MoS2 crystals. Here, molybdenum dioxide (MoO2), a chemically more stable and safer oxide than MoO3, was utilized to successfully grow cm-scale continuous films of monolayer MoS2. A high-resolution optical image stitching approach and Raman line mapping were used to confirm the composition and homogeneity of the material grown across the substrate. A detailed examination of the surface morphology of the continuous film revealed that, as the gas flow rate increased by an order of magnitude, the grain-boundary separation dramatically reduced, implying a transition from a kinetically to thermodynamically controlled growth. Importantly, the single-step vapor-phase sulfurization (VPS) reaction of MoO2 was shown to suppress intermediate state formations for a wide range of experimental parameters investigated and is completely absent, provided that the global S:Mo loading ratio is set higher than the stoichiometric ratio of 3:1 required by the VPS reaction.

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Selectable Synthesis of 2-D MoS₂and Its Electronic Devices: From Isolated Triangular Islands to Large-Area Continuous Thin Film

Cited by 14 publications

References 38 publications

Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

Nonvolatile Memories Based on Graphene and Related 2D Materials

CVD Synthesis of Intermediate State-Free, Large-Area and Continuous MoS2 via Single-Step Vapor-Phase Sulfurization of MoO2 Precursor

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Selectable Synthesis of 2-D MoS2and Its Electronic Devices: From Isolated Triangular Islands to Large-Area Continuous Thin Film

Cited by 14 publications

References 38 publications

Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

Nonvolatile Memories Based on Graphene and Related 2D Materials

CVD Synthesis of Intermediate State-Free, Large-Area and Continuous MoS2 via Single-Step Vapor-Phase Sulfurization of MoO2 Precursor

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Selectable Synthesis of 2-D MoS₂and Its Electronic Devices: From Isolated Triangular Islands to Large-Area Continuous Thin Film