Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

Shi, Maolin; Chen, Lin; Zhang, Tianbao; Xu, Jun; Zhu, Hao; Sun, Qizhen; Zhang, David Wei

doi:10.1002/smll.201603157

Cited by 51 publications

(59 citation statements)

References 39 publications

(98 reference statements)

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“…32 High-temperature sulfurization of thickness-controlled MoO 3 by ALD is also a useful approach to obtain high-quality MoS 2 . 10,33 Although these approaches produced promising materials, the high reaction temperatures required as well as high sulfurization temperature still hindered the progress of ALD-MoS 2 . Therefore, it is essential to develop an ALD process at low-temperature, which is more adaptive for temperature-sensitive substrates such as polymeric substrates and further facilitates device fabrication.…”

Section: Introductionmentioning

confidence: 99%

Morphology-controlled MoS₂ by low-temperature atomic layer deposition

et al. 2020

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Section: Introductionmentioning

confidence: 99%

Morphology-controlled MoS₂ by low-temperature atomic layer deposition

et al. 2020

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“…Yet for practical application, wafer‐scale synthesis of high‐quality, continuous MoS 2 film is highly desired. Recently, the chemical vapor deposition (CVD) technique has been applied to produce single‐layer (1L) MoS 2 films with moderate electrical performance and so far the largest number of logic gates is 115 . Mechanically exfoliated multilayer (ML) MoS 2 have shown improved mobility and drive currents because of thicker channel with higher density of states .…”

mentioning

confidence: 99%

High‐Performance Wafer‐Scale MoS₂ Transistors toward Practical Application

Zhang

Guo

et al. 2018

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102

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2D layered materials (2DLMs) have gained tremendous interest for their potential applications in next-generation electronic, optoelectronic, [1][2][3] and energy devices. Although graphene possesses the highest reported mobility, its gapless nature motivates the pursuit of semiconductive transition metal dichalcogenides (TMDs) such as MoS 2 , [4][5][6] which has been intensively investigated based on mechanically exfoliated sheets. Yet for practical Atomic thin transition-metal dichalcogenides (TMDs) are considered as an emerging platform to build next-generation semiconductor devices. However, to date most devices are still based on exfoliated TMD sheets on a micrometer scale. Here, a novel chemical vapor deposition synthesis strategy by introducing multilayer (ML) MoS 2 islands to improve device performance is proposed. A four-probe method is applied to confirm that the contact resistance decreases by one order of magnitude, which can be attributed to a conformal contact by the extra amount of exposed edges from the ML-MoS 2 islands. Based on such continuous MoS 2 films synthesized on a 2 in. insulating substrate, a top-gated field effect transistor (FET) array is fabricated to explore key metrics such as threshold voltage (V T ) and field effect mobility (μ FE ) for hundreds of MoS 2 FETs. The statistical results exhibit a surprisingly low variability of these parameters. An average effective μ FE of 70 cm 2 V −1 s −1 and subthreshold swing of about 150 mV dec −1 are extracted from these MoS 2 FETs, which are comparable to the best top-gated MoS 2 FETs achieved by mechanical exfoliation. The result is a key step toward scaling 2D-TMDs into functional systems and paves the way for the future development of 2D-TMDs integrated circuits. Field Effect TransistorsThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/smll.201803465. application, wafer-scale synthesis of highquality, continuous MoS 2 film is highly desired. Recently, the chemical vapor deposition (CVD) technique has been applied to produce single-layer (1L) MoS 2 films with moderate electrical performance [7][8][9][10] and so far the largest number of logic gates is 115. [11][12][13] Mechanically exfoliated multilayer (ML) MoS 2 have shown improved mobility and drive currents because of thicker channel with higher density of states. [14,15] A smaller bandgap associated with ML-MoS 2 [16,17] is also more appropriate for device performance engineering. [18][19][20] However, it is rather difficult to grow a uniform and continuous multilayer MoS 2 film since precise control of layer number of stacked MoS 2 remains unsolved, [21,22] and vertical growth is limited by the interlayer diffusion rate of S atoms (much slower than in-plane diffusion) and high surface energy. [23] Besides, it is rather difficult to maintain a planar growth in a controllable manner, instead most results simultaneously produce a mixture of monolayer, multilayer, and empty islands. [24,25] Despite the demand of high-quality wa...

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“…Similarly, transition metal oxide was used as a predeposited thin film prior to obtaining a 2D TMD thin film . For instance, Shi et al reported the growth of a MoS 2 thin film on a sapphire substrate by sulfurizing the MoO 3 film deposited by ALD, showing that MoS 2 films with the desired thickness can be obtained by varying the MoO 3 ALD cycle ( Figure a) . As the number of cycles of ALD increased, the thickness gradually increased from 0.7 to 2.74 nm, as shown in Figure b.…”

Section: Electronic Transport Devicesmentioning

confidence: 99%

Section: Electronic Transport Devicesmentioning

confidence: 99%

2D Transition Metal Dichalcogenide Thin Films Obtained by Chemical Gas Phase Deposition Techniques

Park

Nielsch

Thomas

2018

Adv Materials Inter

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Ultrathin 2D transition metal dichalcogenide (TMD) thin films have attracted much attention due to their very good electrical, optical, and electrochemical properties. Chemical vapor deposition (CVD) and atomic layer deposition (ALD), which is in some regards an enhanced version of CVD, are techniques that can provide exceptionally conformal large‐area coatings, even for complex surface geometries. Besides, these techniques include the transport of one or more precursor chemicals in the gas phase onto a substrate. Subsequently, a chemical reaction occurs, resulting in the deposition of a film of a solid material on the substrate. One of the advantageous aspects of chemical deposition methods, such as CVD and ALD, is the growth of thin films onto a variety of substrates as well as 3D structures. Because of their chemical approach, these techniques are well suited to synthesizing 2D materials (2DMs) with a low defect concentration. Furthermore, the scalability would allow industrial application, as opposed to, e.g., micromechanical cleavage. Here, the recent progress in 2D TMD thin films is reviewed and the current applications of these materials fabricated by CVD and ALD are surveyed.

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Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

Cited by 51 publications

References 39 publications

Morphology-controlled MoS₂ by low-temperature atomic layer deposition

Morphology-controlled MoS₂ by low-temperature atomic layer deposition

High‐Performance Wafer‐Scale MoS₂ Transistors toward Practical Application

2D Transition Metal Dichalcogenide Thin Films Obtained by Chemical Gas Phase Deposition Techniques

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Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

Cited by 51 publications

References 39 publications

Morphology-controlled MoS2 by low-temperature atomic layer deposition

Morphology-controlled MoS2 by low-temperature atomic layer deposition

High‐Performance Wafer‐Scale MoS2 Transistors toward Practical Application

2D Transition Metal Dichalcogenide Thin Films Obtained by Chemical Gas Phase Deposition Techniques

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Product

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Morphology-controlled MoS₂ by low-temperature atomic layer deposition

Morphology-controlled MoS₂ by low-temperature atomic layer deposition

High‐Performance Wafer‐Scale MoS₂ Transistors toward Practical Application