Antimony‐based perovskite‐inspired materials (PIMs) are solution‐processable halide absorbers with interesting optoelectronic properties, low toxicity, and good intrinsic stability. Their bandgaps around 2 eV make them particularly suited for indoor photovoltaics (IPVs). Yet, so far only the fully inorganic Cs3Sb2ClxI9−x composition has been employed as a light‐harvesting layer in IPVs. Herein, the first triple‐cation Sb‐based PIM (CsMAFA‐Sb) in which the A‐site of the A3Sb2X9 structure consists of inorganic cesium alloyed with organic methylammonium (MA) and formamidinium (FA) cations is introduced. Simultaneously, the X‐site is tuned to guarantee a 2D structure while keeping the bandgap nearly unchanged. The presence of three A‐site cations is essential to reduce the trap‐assisted recombination pathways and achieve high performance in both outdoor and indoor photovoltaics. The external quantum efficiency peak of 77% and the indoor power conversion efficiency of 6.4% are the highest values ever reported for pnictohalide‐based photovoltaics. Upon doping of the P3HT hole‐transport layer with F4‐TCNQ, the power conversion efficiency of CsMAFA‐Sb devices is fully retained compared to the initial value after nearly 150 days of storage in dry air. This work provides an effective compositional strategy to inspire new perspectives in the PIM design for IPVs with competitive performance and air stability.

The stability of perovskite solar cells (PSCs) is greatly affected by the interface between the perovskite active layer and the hole transport material (HTM). The rational design of HTMs with effective anchoring to the perovskite surface is an emerging elegant strategy to promote compact and ordered interfaces that lead to highly efficient and stable PSCs. Herein, we propose two fluorene-based HTM molecular architectures (SCF1 and SCF2) derived from the popular yet expensive Spiro-OMeTAD. Their employment as dopant-free HTMs in standard triple-cation CsFAMA PSCs leads to superior device stability, with a T 80 lifetime well above 1 year (431 days). Our combined theoretical and experimental study of the CsFAMA|HTM interface reveals that the improved adhesion of the SCF-HTMs to the perovskite layer is the key to minimize the non-radiative recombination, reduce the hole trap density, and enhance the long-term stability of the corresponding devices. The simplified structures of SCF1 and SCF2, obtained by removing the orthogonal fragment of the Spiro-OMeTAD scaffold, show a lower molecular distortion than Spiro-OMeTAD, thus promoting a favorable electronic interaction between the SCF-HTMs and the perovskite. This study provides useful design criteria for achieving highly stable PSCs including dopant-free HTMs with optimized adhesion to the perovskite surface.