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Perfectly conformal deposition into deep trenches or filling of them without keyhole formation is achieved (see Figure) by atomic layer deposition (ALD). Good conformality can be obtained with other CVD processes, but the unique surface‐controlled, self‐limiting growth mechanism of ALD may give the technique significant advantages over other methods for future generation IC technology.

Diffusion barrier materials, TiN and WN, were deposited by atomic layer deposition (ALD). The chlorine concentration of the TiN film was as low as 1.2 at.-%, and resistivity was below 200 lX cm. Ultra high aspect ratio (AR = 85) trenches were used to assess step coverage. Tungsten nitride film, deposited from WF 6 and ammonia, was found to have high resistivity, although the residue content was low. The barrier deposition compatibility was studied using the copper surface exposed on the bottom of vias in the copper dual-damascene structure. The deposition on copper of both TiN and WN was found to be very challenging.

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