Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processes

Hiltunen, Lassi; Kattelus, Hannu; Leskelä, Markku; Mäkelä, Maarit; Niinistö, Lauri; Nykänen, E.; Soininen, P.; Tiittad, M.

doi:10.1016/0254-0584(91)90073-4

Cited by 87 publications

(59 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The growth rates observed in chloride processes carried out at 500 ' C are 0.6 &cycle for [51,56], around 0.5 &cycle for Ti02 [57], Zr02 [58] and Hf02 [67], 0.43 &cycle for Ta205 [24, 0.27 &cycle for In203 [68] and 0.34 &cycle for Sn02 [69]. The results show that only a submonolayer is growing during one cycle.…”

Section: Deposition Chemistrymentioning

confidence: 53%

“…The effect of the source chemical on the growth reaction has been studied in the case of Al, Ti and Ta oxides using alkoxides as alternative precursors [51][52][53]701. Water served also here as an oxygen source.…”

Section: Deposition Chemistrymentioning

confidence: 99%

“…The other reasons maybe the dehydroxylation which limits the number of reaction sites available, the formation of volatile hydroxide chloride species and the readsorption of HC1. It is worth noticing that the growth rate seems to be higher (> 1 &cycle) at lower temperatures (150-200 'C) [24,51,56] because of the larger amount of hydroxyl groups at the surface. At low temperatures, however, the contents of chloride and hydroxide residues in the films may be high weakening the film properties which can be seen in the refractive index values and etching properties.…”

Section: Deposition Chemistrymentioning

confidence: 99%

“…When deposited on glass some of the ALE oxides (A1203 [51,56], Ta205 [70,71]) are completely amorphous to XRD while some others (e.g. Hf02 [67], In203 [68]) possess highly oriented crystalline structures.…”

Section: Deposition Chemistrymentioning

confidence: 99%

“…Water is suitable oxygen source if metal chlorides [36, or alkyl precursors are used [50,59,60] but water is not necessarily the best choice to be used in combination with P-diketonates. Other possible oxygen sources are O2 [61], H202 [48], alcohols [51], O3 [54,55] and N20 [62].…”

Section: Deposition Chemistrymentioning

confidence: 99%

See 4 more Smart Citations

Atomic Layer Epitaxy in Deposition of Various Oxide and Nitride Thin Films

Leskelä

Ritala

1995

J. Phys. IV France

Self Cite

View full text Add to dashboard Cite

Section: Deposition Chemistrymentioning

confidence: 53%

Section: Deposition Chemistrymentioning

confidence: 99%

Section: Deposition Chemistrymentioning

confidence: 99%

Section: Deposition Chemistrymentioning

confidence: 99%

Section: Deposition Chemistrymentioning

confidence: 99%

See 3 more Smart Citations

Atomic Layer Epitaxy in Deposition of Various Oxide and Nitride Thin Films

Leskelä

Ritala

1995

J. Phys. IV France

Self Cite

View full text Add to dashboard Cite

Metallic Materials Deposition: Metal‐Organic PrecursorsBased in part on the article Metallic Materials Deposition: Metal–Organic Precursors by Herbert D. Kaesz, Alfred Zinn, & Lutz Brandt which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.

Winter

Zheng

El‐Kaderi

2005

Encyclopedia of Inorganic Chemistry

View full text Add to dashboard Cite

This review describes metal‐organic precursors for the growth of metal‐containing thin films by chemical vapor deposition methods. The major emphasis is on precursors that have been reported since 1994, and corresponds to a time of major growth in this field. Progress in the development of metal‐organic precursors is documented for the main group, lanthanide, and group 4–11 elements. In the main group elements, there has been considerable research activity directed toward the identification of strontium and barium precursors, due both to the technological importance of mixed oxide phases and the inherent difficulties in obtaining volatile, complexes of these large metal ions. Aluminum, gallium, and indium have also been the subject of intense investigation, owing to the importance of many phases containing these elements. The group 4 and 5 elements titanium, zirconium, hafnium, niobium, and tantalum have been the subject of considerable precursor development activity, owing to the importance of several mixed oxide phases and the importance of zirconium and hafnium oxide for high permittivity gate materials in microelectronics devices. Growth of metal nitride films of these elements has also been an active area of research for use as barrier materials in microelectronics devices. The deposition of copper metal films from metal‐organic precursors is driven by the urgent need for copper metallization procedures in microelectronics device manufacturing. The current state of metal‐organic precursor development is presented for each of the other metallic elements.

show abstract