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We have quantified two-dimensional dopant profiles in Si with high accuracy using a commercial field emission gun scanning electron microscope with added secondary electron energy-filtering capabilities. Quantification was achieved for dopant concentrations of 2.8ϫ 10 17 -7.5ϫ 10 19 cm −3 with an accuracy of ±8.5%. Using energy filtering, we have measured the surface potential difference ⌬⌽ s across a 3 nm wide p-doped Si layer with respect to the n-doped substrate of a test structure to be 0.72± 0.15 V. Spatial resolution limits are discussed and are shown to be limited by the secondary electron escape depth. A technique for the rapid collection of calibrated energy-filtered images is also proposed.

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