Ordered silicon nanocones arrays for label-free DNA quantitative analysis by surface-enhanced Raman spectroscopy Appl. Phys. Lett. 99, 153116 (2011); 10.1063/1.3650937Label-free detection of oligonucleotide microarrays by oblique-incidence reflectivity difference method

We present a promising approach for the label-free characterization of genetic material. Time-resolved terahertz (THz) transmission analysis of polynucleotides demonstrate a strong dependence of the complex refractive index on the binding state (hybridized/denatured) of deoxyribonucleic acid (DNA) molecules. By monitoring THz transients, one can thus infer the binding state of oligo- and polynucleotides, and hence identify polynucleotides by detecting the binding of unknown polynucleotide DNA sequences to known probe molecules. A broadband experimental demonstration in a free-space configuration, as well as a discussion of the potential application for next generation gene chips is presented.

In search of novel detectors of electromagnetic radiation at terahertz frequencies, field-effect transistors (FETs) have recently gained much attention. The current literature studies them with respect to the excitation of plasma waves in the two-dimensional channel. Circuit aspects have been taken into account only to a limited degree. In this paper, we focus on embedding silicon FETs in a proper circuitry to optimize their responsivity to terahertz radiation. This includes impedance-matched antenna coupling and amplification of the rectified signal. Special attention is given to the investigation of high-frequency short-circuiting of the gate and drain contacts by a capacitive shunt, a common approach of high-frequency electronics to induce resistive mixing in transistors. We theoretically study the effect of shunting in the framework of the Dyakonov–Shur plasma-wave theory, with the following key results. In the quasistatic limit, the capacitive shunt induces the longitudinal high-frequency field needed in the FET’s channel for resistive mixing. In the non-quasi-static case, the shunt’s role is taken over by plasma waves. Rectification can then be described as distributed self-mixing in the transistor’s channel. Based on such considerations as well as other circuit-related aspects, we arrive at a rational design for FET-based detectors of terahertz radiation, and implement the first monolithically integrated 0.65 THz focal-plane array including antennas and amplifiers on a single silicon die. The measured performance data compare well with the theoretical predictions.

No abstract

No abstract

The development of ultrahigh-quality-factor (Q) silicon-on-insulator (SOI) microring resonators based on silicon wire waveguides is presented. An analytical description is derived, illustrating that in addition to low propagation losses the critical coupling condition is essential for optimizing device characteristics. Propagation losses as low as 1.9 +/- 0.1 dB/cm in a curved waveguide with a bending radius of 20 microm and a Q factor as high as 139.000 +/- 6.000 are demonstrated. These are believed to be the highest values reported for a curved SOI waveguide device and for any directly structured semiconductor microring fabricated without additional melting-induced surface smoothing.

No abstract

Low-loss high dielectric-constant materials are analyzed in the terahertz frequency range using time-domain spectroscopy. The dielectric constant and loss tangent for steatite, alumina, titania loaded polystyrene, and zirconium-tin-titanate are presented and compared to measurements on high-resistivity silicon. For these materials, the real part of the dielectric constant ranges from 6 to 90. All of the samples were found to have reasonable low-loss tangents. Applications as photonic crystal substrates for terahertz frequency antenna are envisaged.