The vic-dioxime complexes bis(2,3-butanedionedioximato)nickel(II), Ni(dmg) 2 ; bis(3,4hexanedionedioximato)nickel(II), Ni(deg) 2 ; bis(4,5-octanedionedioximato)nickel(II), Ni(dpg) 2 ; bis(ethanedialdioximato)nickel(II), Ni(g) 2 ; bis(1,2-diphenylethanedionedioximato)nickel(II), Ni(dbg) 2 ; bis(1,2-cyclohexanedionedioximato)nickel(II), Ni(nox) 2 ; and bis(2,3-pentanedionedioximato)nickel(II), Ni(meg) 2 , were prepared. Their volatilities were compared under ambient and reduced pressure using thermogravimetry. Ni(deg) 2 and Ni(dpg) 2 were the most volatile, and the variation in volatility of each complex was explained on the basis of ligand effects, crystal packing, and nickel-nickel distances using solid-state electronic spectra. The crystal structure of Ni(dpg) 2 was determined for the first time: monoclinic crystal system, C2/c space group. The complex packs in pairs related by the c-glide plane symmetry. Short intrapair distances of 3.312(2) Å are observed between Ni and N with short and long Ni-Ni distances of 3.2044(5) and 5.7964(5) Å, respectively. Metal-organic chemical vapor deposition (MOCVD) experiments were conducted using Ni(deg) 2 as precursor in a vertical cold-walled reactor. The precursor transport and film growth behavior, morphology, and composition have been examined. Pure films could be grown between 350 and 400 °C in helium. Growth rates were greater with additional hydrogen, but the films were heavily contaminated with carbon. The difference in growth rates and film morphology for the different reactor conditions was investigated.

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Effective pattern transfer into PrBaCaMnO 3 and LaSrMnO 3 has been achieved using Cl 2 /Ar discharges operated under inductively coupled plasma conditions. Etch rates up to 900 Å min Ϫ1 for LaSrMnO 3 and 300 Å min Ϫ1 for PrBaCaMnO 3 were obtained, with these rates being a strong function of ion flux, ion energy, and ion-to-neutral ratio. The etching is still physically dominated under all conditions, leading to significant surface smoothing on initially rough samples. Submicron (0.35 m) features have been produced in both materials using SiN x as the mask.

Effective pattern transfer into (Pr,Ba,Ca)MnO3 and (La,Sr)MnO3 has been achieved using Cl2/Ar discharges operated under Inductively Coupled Plasma conditions. Etch rates up to 900 Å-min−1 for (La,Sr)MnO3 and 300 Å-min−1 for (Pr,Ba,Ca)MnO3 were obtained, with these rates being a strong function of ion flux, ion energy and ion-to-neutral ratio. The etching is still physically-dominated under all conditions, leading to significant surface smoothing on initially rough samples. Sub-micron (0.35 μm) features have been produced in both materials using SiNx as the mask.