We report on Zn-diffusion in the A1GaInAs quaternary compounds using a semiclosed box technique. An interstitialsubstitutional mechanism is proposed to explain the electrical and atomic profiles. An increase of the diffusion coefficient with increasing A1 content of the layers is observed. C-V measurements at 1 MHz are consistent with an abrupt junction and a constant doping level in the epitaxial layers. The forward current of the diffused junction is exponentially dependent on the applied voltage over several decades of current with an ideality factor n between 1 and 2. The reverse leakage current results from bulk and surface generation-recombination current and tunneling current, as inferred from measurements at various temperatures.
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