High quality GaAs epilayers grown by metal-organic chemical vapor deposition are demonstrated on a SiO 2-patterned silicon substrate using aspect ratio trapping technique, whereby threading dislocations from lattice mismatch are largely reduced via trapping in SiO 2 trenches during growth. A depletion-mode metal-oxide-semiconductor field-effect transistor ͑MOSFET͒ is demonstrated on a n-doped GaAs channel with atomic-layer deposited Al 2 O 3 as the gate oxide. The 10 m gate length transistor has a maximum drain current of 88 mA/mm and a transconductance of 19 mS/mm. The surface mobility estimated from the accumulation drain current has a peak value of ϳ500 cm 2 / Vs, which is comparable with those from previously reported depletion-mode GaAs MOSFETs epitaxially grown on semi-insulating GaAs substrates.
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