Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique

Abstract

High quality GaAs epilayers grown by metal-organic chemical vapor deposition are demonstrated on a SiO 2-patterned silicon substrate using aspect ratio trapping technique, whereby threading dislocations from lattice mismatch are largely reduced via trapping in SiO 2 trenches during growth. A depletion-mode metal-oxide-semiconductor field-effect transistor ͑MOSFET͒ is demonstrated on a n-doped GaAs channel with atomic-layer deposited Al 2 O 3 as the gate oxide. The 10 m gate length transistor has a maximum drain current of 88 mA/mm and a transconductance of 19 mS/mm. The surface mobility estimated from the accumulation drain current has a peak value of ϳ500 cm 2 / Vs, which is comparable with those from previously reported depletion-mode GaAs MOSFETs epitaxially grown on semi-insulating GaAs substrates.

Growth and characterization of GaAs layers on polished Ge/Si by selective aspect ratio trapping

“…These results suggest that further reduction of dislocation density in GaAs films on this virtual Ge/Si substrate could be realized with optimized post-growth or in-situ thermal treatment. In fact, high performance Esaki diodes [15] and MOSFET [16] devices based on this approach have been successfully demonstrated recently.…”

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

“…20(c)). CMP is generally required to establish a lat surface for device integration [137,138]. Despite various process modiications, reducing the coalescence dislocations remains an unsolved challenge [135].…”

Effect of threading dislocation density and dielectric layer on temperature-dependent electrical characteristics of high-hole-mobility metal semiconductor field effect transistors fabricated from wafer-scale epitaxially grown p-type germanium on silicon substrates

“…7 In addition, a thin layer of Ge can be used as a buffer to integrate III-V channel materials to achieve high electron mobility. 8,9 Hence, Ge and III-V materials epitaxially grown on Si have emerged as a promising candidate for the next generation of high-mobility field-effect transistors. 10 While the superior carrier mobility in Ge is recognized, the use of epitaxially grown Ge-on-Si (GoS) wafer-scale substrates for high-mobility transistors has not been commercially demonstrated because of the difficulty in achieving Ge of sufficient quality.…”