Photovoltaic p-n junctions are the most significant active components of both current infrared photodetectors and advanced ones being developed. It is of the utmost importance to control both p- and n-type extrinsic doping. This letter addresses the issue of activating arsenic as a p-type dopant of Hg1−xCdxTe at temperatures sufficiently low that the integrity of p-n junctions and the intrinsic advantages of molecular beam epitaxy as a growth technique will not be compromised. The p-type activation of arsenic in (211)B Hg1−xCdxTe is reported after a two-stage anneal at temperatures below 300 °C for Cd compositions suitable for the sensing of long wavelength infrared radiation.
We present the results of using an electron cyclotron resonance (ECR) plasma to incorporate hydrogen into long wavelength infrared HgCdTe layers grown by molecular beam epitaxy. Both as-grown and annealed layers doped in situ with indium were hydrogenated. Secondary ion mass spectroscopy confirmed the incorporation of hydrogen. Hall and photoconductive lifetime measurements were used to assess the effects of the hydrogenation. Increases in the electron mobilities and minority carrier lifetimes were observed for almost all ECR conditions.
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