X-ray photoelectron spectroscopy using synchrotron radiation has been used to investigate the HfO2/SiO2 interface chemistry of high-quality 0.6 and 2.5 nm HfO2/0.6 nm SiO2/Si structures. The high energy resolution (0.15 eV) along with the high brightness level allows us to separate, unambiguously, on both Hf 4f and Si 2p core-level spectra, interfacial Hf–silicate bonds from bulk HfO2 and SiO2 contributions, thus making possible subsequent quantitative treatments and modeling of the interfacial layer structure. Careful assessment of the energy shift of the interfacial components shows that Si-rich Hf silicates are present. The underlying assumption that initial-state contribution dominates the observed Si 2p shift is briefly discussed.

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For the first time the maximum thermal budget of in-situ doped source/drain State Of The Art (SOTA) FDSOI bottom MOSFET transistors is quantified to ensure transistors stability in Sequential 3D (CoolCube TM ) integration. We highlight no degradation of Ion/Ioff trade-off up to 550°C. Thanks to both metal gate work-function stability especially on short devices and silicide stability improvement, the top MOSFET temperature could be relaxed up to 500°C. Laser anneal is then considered as a promising candidate for junctions activation. Based on in-depth morphological and electrical characterizations it demonstrates very promising results for high performance Sequential 3D integration.