Silver nanowire (Ag NW) networks are one of the most promising candidates for the replacement of indium tin oxide (ITO) thin films in many different applications. Recently, Ag-NW-based transparent heaters (THs) showed excellent heating performance. In order to overcome the instability issues of Ag NW networks, researchers have offered different hybrid structures. However, these approaches not only require extra processing, but also decrease the optical performance of Ag NW networks. So, it is important to investigate and determine the thermal performance limits of bare-Ag-NW-network-based THs. Herein, we report on the effect of NW density, contact geometry, applied bias, flexing and incremental bias application on the TH performance of Ag NW networks. Ag-NW-network-based THs with a sheet resistance and percentage transmittance of 4.3 Ω sq(-1) and 83.3%, respectively, and a NW density of 1.6 NW μm(-2) reached a maximum temperature of 275 °C under incremental bias application (5 V maximum). With this performance, our results provide a different perspective on bare-Ag-NW-network-based transparent heaters.
Understanding charging mechanisms and charge retention dynamics of nanocrystal (NC) memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium NCs embedded in a silicon oxide matrix was performed. Dynamic measurements of discharge dynamics are carried out. Charge decay is modelled by assuming storage of carriers in the ground states of NCs and that the decay is dominated by direct tunnelling. Discharge rates are calculated using the theoretical model for different NC sizes and densities and are compared with experimental data. Experimental results agree well with the proposed model and suggest that charge is indeed stored in the quantized energy levels of the NCs. © 2006 Elsevier B.V. All rights reserved
This paper presents simulation results of radiation analyses performed for GEO (GEosynchronous Orbit) environment. As is well known, Total Ionizing Dose (TID) is one of radiation effects, which causes permanent defects on electronic components, therefore the TID is of particular interest. We first simulate radiation environment and then TIDs on the sensitive electronic component are calculated by considering different scenarios. TID is generally calculated only considering shielding effect. In our case, we particularly investigate effects of the placement in a satellite on the TID. The different scenarios with different shielding materials and thickness are also simulated. The comparison of results is presented.
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