ABSTRACT:Transition metal dichalcogenides (TMDs) are layered semiconductors with indirect band gaps comparable to Si. These compounds can be grown in large area, while their gap(s)can be tuned by changing their chemical composition or by applying a gate voltage. The experimental evidence collected so far, points towards a strong interaction with light, which contrasts with the small photovoltaic efficiencies η ≤ 1% extracted from bulk crystals or exfoliated monolayers. Here, we evaluate the potential of these compounds by studying the photovoltaic response of electrostatically generated PN-junctions composed of approximately ten atomic-layers of MoSe 2 stacked onto the dielectric h-BN. In addition to ideal diode-like response, we find that these junctions can yield, under AM-1.5 illumination, photovoltaic efficiencies η exceeding 14 %, with fill-factors of ~ 70 %. Given the available strategies for increasing η such as gap tuning, improving the quality of the electrical contacts, or the

High surface area metal oxides offer a unique substrate for the assembly of multiple molecular components at an interface. The choice of molecules, metal oxide, and the nature of the assembly method can have a profound influence on the mechanism, rate, and efficiency of photoinduced energy and electron transfer events at the interface. Owing to their diversity and high level of control, these interfacial assemblies are of interest for numerous applications including solar energy conversion, photoelectrosynthesis, photo-writable memory, and more. Although these assemblies are generated with very different goals in mind, they rely on similar surface binding motifs and molecular structure-property relationships. Therefore, the goal of this review is to summarize the various strategies (i.e. co-deposition, axial coordination, metal ion linkages, electrostatics, host-guest interactions, etc.) for assembling chromophores, hosts, electron donors/acceptors, and insulating co-adsorbent molecules on mesoporous metal oxide substrates. The assembly, synthesis, and characterization, as well as subsequent photoinduced events (i.e. cross-surface energy/electron transfer, interchromophore energy transfer, electron injection, and others) are discussed for the various assembly strategies.

The rate and efficiency of electron transfer events at the semiconductor-dye-electrolyte interface is of critical importance to the overall performance of dye-sensitized solar cells (DSSCs) and dye-sensitized photoelectrosynthesis cells. In this work, we introduce self-assembled bilayers composed of a metal oxide electrode, bridging molecules, linking ions, and dye as an effective strategy to manipulate interfacial electron transfer events at the photoanode of DSSCs. Spectroelectrochemical measurements including current-voltage, incident photon-to-current efficiency, and electrochemical impedance spectroscopy are used to quantify interfacial electron transfer and transport events with respect to the length of the bridging molecules. The general trend in increased lifetime and diffusion length in TiO2 as well as an increase in open circuit voltage with bridge length indicate that the bilayer is an effective strategy in inhibiting the TiO2(e(-)) to redox mediator recombination events. However, the increased separation between the dye and the semiconductor also reduces the electron injection rate resulting in a decrease in photocurrent as the bridge length increases. The observed enhancement in open circuit voltages are far outweighed by the significant decrease in photocurrent and thus overall device performance decreases with increasing bridge length.

Current high efficiency dye-sensitized solar cells (DSSCs) rely on the incorporation of multiple chromophores, via either codeposition or preformed assemblies, as a means of increasing broad band light absorption. These strategies have some inherent limitations including decreased total light absorption by each of the dyes, low surface loadings, and complex synthetic procedures. In this report, we introduce an alternative strategy, self-assembled bilayers, as a simple, stepwise method of incorporating two complementary chromophores into a DSSC. The bilayer devices exhibit a 10% increase in J, V, and η over the monolayer devices due to increased incident photon-to-electron conversion efficiency across the entire visible spectrum and slowed recombination losses at the interface. Directional energy and electron transfer toward the metal oxide surface are key steps in the bilayer photon-to-current generation process. These results are important as they open the door to a new architecture for harnessing broadband light in dye-sensitized devices.

Considerable efforts are dedicated to increasing the open-circuit voltage (V) of dye-sensitized solar cells (DSSCs) by slowing charge recombination dynamics using atomic layer deposition, alkyl-substituted dyes, coadsorbents, and other strategies. In this report, we introduce metal-ion coordination to a metal oxide bound dye as an alternative means of increasing V. Metal-ion coordination has minimal influence on the photophysical and electrochemical properties of the N3 dye, but presumably because of increased steric hindrance at the interface, it slows charge recombination kinetics and increases V by upwards of 130 mV relative to the parent N3 DSSC. With respect to the nature of the metal ion, the trend in decreasing short-circuit current (J) and increasing V correlates with the charge of the coordinated metal ion (M → M → M). We attribute this trend to electrostatic interactions between the metal cation and I or I, with the more highly charged cations maintaining a higher concentration of mediator anions in proximity to the surface and, as a result, increasing the regeneration and recombination rates.