In this article, electron beam induced changes in the refractive index and film thickness of time relaxed amorphous AsxS100−x (with x=30–45) and AsxSe100−x (with x=40–70) are studied. The largest index change (∼0.08) in AsxS100−x films is found when x=40. The corresponding value (∼0.06) for AsxSe100−x films is met when x=55. The difference in the best compositions is attributed to the different relaxation processes of As–S and As–Se films. Electron beam irradiation causes surface shrinkage of the films. In AsxSe100−x films contractions are deepest (∼75 nm) when x=55.
The refractive index change caused by electron irradiation was measured in amorphous As–S and As–Se thin films coated with different metals. Metal atoms/ions diffused into the films during irradiation. The diffusion was dependent on the metal and influenced the refractive index. The influence was smallest in As40S60 films although these films possessed the highest overall refractive index changes. Au atoms/ions were almost immobile in all films while Ag atoms/ions had the highest mobility. Their high mobility allowed them to diffuse laterally within the film.
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