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The main purpose of this article is to systematically investigate the influence of offshore fringing reef topography on the infragravity-period harbor oscillations. The infragravity (IG) period oscillations inside an elongated harbor induced by normally-incident bichromatic wave groups are simulated using a fully nonlinear Boussinesq model, FUNWAVE 2.0. Based on an IG wave decomposition method, effects of plane reef-face slopes, reef-face profile shapes and the existence of reef ridge on bound and free IG waves and their relative components inside the harbor are comprehensively studied. For the given harbor and reef ridge, the range of the reef-face slopes and the various profile shapes studied in this paper, results show that the amplitude of the free IG waves inside the harbor increases with the increasing of the reef-face slope; while the bound IG waves inside the harbor seem insensitive to it. The effects of the profile shapes on the IG period waves inside the harbor are closely related to the width of the reef face. The existence of the reef ridge can relieve the bound IG waves to some extent when the incident short wave amplitudes are relatively large, while its effects on the free IG waves are negligible.

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Abstract. Process-induced overlay errors are a growing problem in meeting the ever-tightening overlay requirements for integrated circuit production. Although uniform process-induced stress is easily corrected, nonuniform stress across the wafer is much more problematic, often resulting in noncorrectable overlay errors. Measurements of the wafer geometry of free, unchucked wafers give a powerful method for characterization of such nonuniform stress-induced wafer distortions. Wafer geometry data can be related to in-plane distortion of the wafer pulled flat by an exposure tool vacuum chuck, which in turn relates to overlay error. This paper will explore the relationship between wafer geometry and overlay error by the use of silicon test wafers with deliberate stress variations, i.e., engineered stress monitor (ESM) wafers. A process will be described that allows the creation of ESM wafers with nonuniform stress and includes many thousands of overlay targets for a detailed characterization of each wafer. Because the spatial character of the stress variation is easily changed, ESM wafers constitute a versatile platform for exploring nonuniform stress. We have fabricated ESM wafers of several different types, e.g., wafers where the center area has much higher stress than the outside area. Wafer geometry is measured with an optical metrology tool. After fabrication of the ESM wafers including alignment marks and first level overlay targets etched into the wafer, we expose a second level resist pattern designed to overlay with the etched targets. After resist patterning, relative overlay error is measured using standard optical methods. An innovative metric from the wafer geometry measurements is able to predict the process-induced overlay error. We conclude that appropriate wafer geometry measurements of in-process wafers have strong potential to characterize and reduce process-induced overlay errors.

The main purpose of this article is to systematically investigate the influence of the variation of the incident wave height and the bottom profile inside an elongated rectangular harbor on relevant physical phenomena involved in transient harbor oscillations induced by normal-incident solitary waves. These phenomena include wave height evolution, oscillation amplification, total wave energy and relative wave energy distribution inside the harbor. A series of numerical experiments are carried out using the FUNWAVE 2.0 model. Results show that the height evolution of the incident wave during the shoaling process inside the harbor coincides well with Green's law. When the wave nonlinearity is relatively weak, the maximum oscillation inside the harbor can be regarded as increasing linearly with the incident solitary wave height; while as the wave nonlinearity becomes strong, the amplification factor of the incident solitary wave increases gradually with the wave nonlinearity. The total wave energy trapped in the harbor depends on both the mean water depth and the bottom profile. The relative wave energy distribution inside the harbor is greatly affected by the incident solitary wave height; however, the variation of the bottom profile inside the harbor has a negligible effect on it.