In this work, we present a theoretical study of a vertical parallel junction silicon solar cell under monochromatic illumination. The internal quantum efficiency (IQE) and the photovoltaic conversion efficiency are calculated, taking into account the base doping density and illumination wave-length. The main purpose of this work is to show how conversion efficiency depends on internal quantum efficiency and the dependence of the later on the base doping density.
The near-surface atomic composition and the character of chemical bond in two nonevaporable gettering alloys have been investigated via core level (Zr 3d, Fe 2p, V 2p, O 1s, C 1s) photoemission. The samples have been measured in UHV after in-air fracturing and various annealing steps (up to 850 °C). For T>400 °C a progressive and sizeable decrease of the near surface C content along with an increase in the Zr concentration is observed in both alloys. An annealing induced Zr enrichment at the surface is found, the metallic atomic concentrations being significantly far from the nominal bulk stoichiometry. The annealing induces a strong evolution in the chemical bonds, the metallic species being completely oxidized in in-air fractured samples while a metallic character progressively emerges at increasing temperatures. Surface metallization proceeds faster in Zr2Fe than in the V-containing getter.
The partial (s-d) density of empty states at the Cu site in the pseudo-5 x5 Si(111)/Cu interface has been investigated by polarization-dependentx-ray absorption spectroscopy at the Cu L2, 3 edges. The absorption spectra are strongly dichroic showing a metallic edge in the interface plane and a quasigap in the perpendicular direction. The t~o-dimensional nature of the electron-band states at the pseudo-5 x 5 interface layer is therefore directly probed.
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