Structural, morphological and photoluminescence properties of W-doped ZnO nanostructures

Ngom, B.D.; Sakho, O.; Manyala, Ncholu I.; Kana, J. B. Kana; Mlungisi, N.; Guerbous, L.; Fasasi, A.Y.; Maaza, M.; Beye, Aboubaker Chédikh

doi:10.1016/j.apsusc.2009.03.089

Cited by 49 publications

(25 citation statements)

References 21 publications

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“…The mechanism of deep-level emission is not clear yet, but it is suspected that structural defects, oxygen deficiencies, impurities [24,25], or oxygen interstitials created by excess oxygen are the main cause [26]. We believe that this can also originate from a higher surface-to-volume ratio for the thinner nanostructures, resulting in more surface and sub-surface oxygen vacancies [27]. Xu et al [28] calculated the energy levels of the intrinsic defects in ZnO films using full-potential linear muffin-tin orbital method.…”

Section: Resultsmentioning

confidence: 99%

“…The green-yellow band emissions 2.34-2.38 eV are attributed to the radial recombination of a photon generated hole with an electron that belongs to a singly ionized oxygen vacancy in the surface and sub-surface lattices of ZnO materials [23] (dominant in bulk ZnO) and recombination at surface states (low-dimensional structures with reduced volume to surface ratio) [25,32]. The effect of the W-doping on the luminescence properties of the ZnO nanostructures have been reported and discussed in our previous work [27]. However the PL results show that the temperature plays an important role on the intensity of the deep level emission.…”

Section: Resultsmentioning

confidence: 99%

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Temperature-dependent growth mode of W-doped ZnO nanostructures

Ngom

Chaker

Manyala

et al. 2011

Applied Surface Science

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Temperature-dependent growth mode of W-doped ZnO nanostructures

Ngom

Chaker

Manyala

et al. 2011

Applied Surface Science

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“…Detailed information on the effect of W-doping on the structural properties of the ZnO is discussed in our previous work [13].…”

Section: Resultsmentioning

confidence: 99%

“…The detailed experimental conditions for the pulsed laser deposition growth, X-ray diffraction structural characterization of the samples are reported in our previous work [13]. However, the morphology was studied using an atomic force microscopy (AFM) model NanoMan V Veeco.…”

Section: Methodsmentioning

confidence: 99%

Photon-induced tunable and reversible wettability of pulsed laser deposited W-doped ZnO nanorods

Ngom

Sakho

Ndiaye

et al. 2011

Eur. Phys. J. Appl. Phys.

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Abstract. ZnO nanorods arrays were prepared on soda lime glass substrate by pulsed laser deposition method. Hexagonal rod-like ZnO rods were obtained under different conditions. Well-defined ZnO nanorods arrays were selected among different samples having various morphologies and sizes already studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). Here, we report on the contact angle measurement (CAM) of one of these samples. A systematic change of the surface wettability is observed in W-doped ZnO nanostructures. The water contact angle (WCA) of a 1 wt.% of WO 3 target content was found to be the transition doping level from hydrophilic surface to a hydrophobic surface. We attributed the transition in surface wettability of the film with the doping to incorporation increase of tungsten into the film. Such characteristic surface wettability can play a key role in the adhesion of various layers on W-ZnO nanorods arrays for optoelectronic device applications.

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“…But the effectiveness of the device is of course, dependent on its quantum efficiency. As of today, oxygen vacancies and zinc vacancies are known as the sources of green and violet luminescence from the ZnO, respectively [6,7]. But UV emission at room temperature from ZnO has been attributed to several origins: for example, Vladimir et al [8] assigned the recombination of donor-bound exciton with UV emission from ZnO where donor entity was not identified, Yang Zhang et al [9] referred the UV peak as free exciton recombination process; Reynolds et al [10] correlated it with an acceptor related transition, Ü. Özgür et al [11] and L.L.…”

Section: Introductionmentioning

confidence: 99%

Origin of Ultraviolet Luminescence from Bulk ZnO Thin Films Grown by Molecular Beam Epitaxy

Asghar

Kazemzad

Ali

et al. 2011

AEF

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Abstract. Origin of ultraviolet (UV) luminescence from bulk ZnO has been investigated with the help of photoluminescence (PL) measurements. Thin films of ZnO having 52%, 53% and 54% of Zn-contents were prepared by means of molecular beam epitaxy (MBE). We observed a dominant UV line at 3.28 eV and a visible line centered at 2.5 eV in the PL spectrum performed at room temperature. The intensity of UV line has been found to depend upon the Zn percentage in the ZnO layers. Thereby, we correlate the UV line in our samples with the Zn-interstitials-bound exciton (Zn i -X) recombination. The results obtained from, x-ray diffraction, the energy dispersive X-ray spectrum (EDAX) and Raman spectroscopy supported the PL results.

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Structural, morphological and photoluminescence properties of W-doped ZnO nanostructures

Cited by 49 publications

References 21 publications

Temperature-dependent growth mode of W-doped ZnO nanostructures

Temperature-dependent growth mode of W-doped ZnO nanostructures

Photon-induced tunable and reversible wettability of pulsed laser deposited W-doped ZnO nanorods

Origin of Ultraviolet Luminescence from Bulk ZnO Thin Films Grown by Molecular Beam Epitaxy

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