We studied the microstructure and the dielectric and pyroelectric properties of Al x Ga 1 -x N composite epitaxial layers grown on SiC/Si(111) substrates by chloride-hydride epitaxy. The phenomenon of spontaneous (in the process of layer growth) formation of a system of heterojunctions was discovered. We obtained a material based on Al x Ga 1 -x N epitaxial layers, which currently has one of the highest pyroelectric coefficients for crystals (or thin films) of aluminum nitride.

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