Dielectric and pyroelectric properties of AlN single-crystal layers grown by chloride-hydride epitaxy

Shustova, O. A.; Сергеева, О. Н.; Solnyshkin, A. V.; Zezianov, I. T.; Kaptelov, E. Yu.; Пронин, И. П.; Sharofudinov, Sh. Sh.; Кукушкін, С. А.

doi:10.1080/00150193.2022.2041930

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“…In this case, the heat flux impact causes charge shifts in adjacent layers towards each other and the recorded resultant pyroelectric current is a result of subtraction of the induced current of each sublayer, rather than of addition. A similar approach for multilayer nitride structures was used to explain significant reduction of pyroelectric coefficient in a three-layer aluminum nitride structure grown directly on SiC/(111)Si substrate [26].…”

Section: Resultsmentioning

confidence: 99%

Structure and properties of composites based on aluminum and gallium nitrides grown on silicon of different orientations with a buffer layer of silicon carbide

Sh.

Кукушкін

Старицын

et al. 2022

Physics of the Solid State

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The microstructure and pyroelectric properties of AlxGa1-xN composite epitaxial layers grown on SiC/Si(111) and SiC/Si(110) hybrid substrates by the chloride-hydride epitaxy have been studied. The phenomenon of spontaneous formation of a system of heterojunctions consisting of periodic AlxGa1-xN layers of different composition located perpendicular to the direction of growth, was discovered during the growth of layers. Measurements of the pyroelectric coefficients of these heterostructures have shown that regardless of the orientation of the initial Si substrate and their pyroelectric coefficients have close values of the order of γ~(0.7-1)·10-10 C/cm2K. It is shown that to increase the magnitude of the pyroresponse it is necessary to deposit an AlN layer with a thickness exceeding 1 μm on the AlxGa1-xN/SiC/Si surface. This leads to record values of the pyroelectric coefficient γ~18·10-10 C/cm2K for AlN crystals and films. Keywords: silicon carbide-on-silicon substrates, chloride-hydride epitaxy, AlGaN epitaxial layers, aluminum nitride, gallium nitride, pyroelectric properties.

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Section: Resultsmentioning

confidence: 99%