Direct access into cells' interiors is essential for biomolecular delivery, gene transfection, and electrical recordings yet is challenging due to the cell membrane barrier. Recently, molecular delivery using vertical nanowires (NWs) has been demonstrated for introducing biomolecules into a large number of cells in parallel. However, the microscopic understanding of how and when the nanowires penetrate cell membranes is still lacking, and the degree to which actual membrane penetration occurs is controversial. Here we present results from a mechanical continuum model of elastic cell membrane penetration through two mechanisms, namely through "impaling" as cells land onto a bed of nanowires, and through "adhesion-mediated" penetration, which occurs as cells spread on the substrate and generate adhesion force. Our results reveal that penetration is much more effective through the adhesion mechanism, with NW geometry and cell stiffness being critically important. Stiffer cells have higher penetration efficiency, but are more sensitive to NW geometry. These results provide a guide to designing nanowires for applications in cell membrane penetration.

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A frequent application of the nanoscratch technique is to estimate hardness of ultrathin films when substrate effects are encountered with the nanoindentation technique. A model based on the work of Goddard and Wilman, which assumes a rigid-plastic behavior of the deformed surfaces, is commonly used for the determination of hardness from scratch tests, yet it overestimates the hardness of materials by as much as a factor of three at very shallow indentation depths on the order of 1-10 nm. The Goddard and Wilman model was extended in this paper to include the effects of the component of the shear stress tangential to the meridianal plane and the elastic recovery of the plastically deformed surfaces assuming elastic-perfectly-plastic material behavior. The proposed model was subsequently verified by performing nanoscratch experiments on fused quartz, which is homogeneous and isotropic with no known surface layers and with known hardness. The hardness was calculated using both the model based on the work of Goddard and Wilman and the extended model. The hardness calculated using the extended model was in very close agreement with the accepted value of bulk hardness of fused quartz over the range of scratch depths tested, showing the importance of the effects of elastic recovery and interfacial shear stress. The model was further verified for the case of a pure aluminum sample and the native thin film coating of alumina that forms on the surface upon air exposure.

A comparative study on the effects of the substrate on the determination of hardness of thin films by the use of the nanoscratch and nanoindentation techniques was conducted. Gold films deposited on fused quartz substrates and silicon dioxide films deposited on aluminum substrates with variant film thicknesses were investigated. These two systems correspond to a soft film on a hard substrate and a hard film on a soft substrate, respectively. The effect of substrate interaction on the measurement of hardness using the nanoscratch technique was found to be less pronounced compared to that of the nanoindentation technique due to: (i) the lower normal loads applied to achieve the penetration depths that occur at higher loads when using the nanoindentation method; (ii) the direct imaging of the residual deformation profile that is used in the nanoscratch technique, which allows for the effects of pileup or sink-in to be taken into account, whereas in the nanoindentation technique the contact area is estimated from the load-displacement data, which does not include such effects; and (iii) the account of elastic recovery of the plastically deformed surfaces from scratch tests. The film thickness did not appear to have any effect on the hardness of Au and SiO2 films obtained from nanoscratch data. This observation allowed, for the case of SiO2 films, the determination of the “free substrate effect region” and the derivation of an empirical relationship that relates the composite hardness of the film/substrate system to the contact-depth-to-film-thickness ratio, even when the indenter penetrates into the substrate. Such findings can allow for the determination of the intrinsic hardness of ultrathin hard films (∼1–5 nm thick), where the substrate effect is unavoidable.

Probe-based memory devices using ferroelectric media have the potential to achieve ultrahigh data-storage densities under high write-read speeds. However, the high-speed scanning operations over a device lifetime of 5-10 years, which corresponds to a probe tip sliding distance of 5-10 km, can cause the probe tip to mechanically wear, critically affecting its write-read resolution. Here, we show that the long distance tip-wear endurance issue can be resolved by introducing a thin water layer at the tip-media interface-thin enough to form a liquid crystal. By modulating the force at the tip-surface contact, this water crystal layer can act as a viscoelastic material which reduces the stress level on atomic bonds taking part in the wear process. Under our optimized environment, a platinum-iridium probe tip can retain its write-read resolution over 5 km of sliding at a 5 mm/s velocity on a smooth ferroelectric film. We also demonstrate a 3.6 Tbit/inch(2) storage density over a 1 × 1 μm(2) area, which is the highest density ever written on ferroelectric films over such a large area.

Achieving stable single-digit nanometer inverted domains in ferroelectric thin films is a fundamental issue that has remained a bottleneck for the development of ultrahigh density ͑Ͼ1 Tbit/ in. 2 ͒ probe-based memory devices using ferroelectric media. Here, we demonstrate that such domains remain stable only if they are fully inverted through the entire ferroelectric film thickness, which is dependent on a critical ratio of electrode size to the film thickness. This understanding enables the formation of stable domains as small as 4 nm in diameter, corresponding to 10 unit cells in size. Such domain size corresponds to 40 Tbit/ in. 2 data storage densities.

Due to the large surface-to-volume ratios and the low loads encountered in microelectromechanical systems (MEMSs), the surface forces become important and may lead to permanent adhesion and high friction between near contacting and contacting surfaces. The effect of these forces can be reduced through surface texturing (roughening) at the contact interface. Moreover, modifying the distribution of the contacting surface asperities so that it becomes positively asymmetric (unbalance between the peak and valley heights) and as peaky as possible (making slender asperities) reduces these forces even further. In the current study, the effects of these parameters, i.e., roughness, asymmetry, and peakiness, on reducing the adhesion and friction in polycrystalline silicon (also referred as polysilicon) MEMS surfaces, were theoretically and experimentally investigated. Polysilicon films with different levels of roughness, asymmetry, and peakiness were fabricated. The roughness characteristics of these films were used in a continuum-based micromechanics model to predict the level of adhesion and friction in actual MEMS devices. Experiments were also conducted to evaluate the adhesion pull-off force and friction coefficient associated with these films. It is found, both experimentally and theoretically, that the adhesion pull-off force and friction coefficient can be reduced by an order of magnitude by increasing the roughness, asymmetry, and peakiness of the contacting surfaces under low external normal forces. Stick-slip behavior, which may be indicative of the presence of adhesive forces, also reduces considerably with the increase of these parameters. Lastly, good agreement was found between simulations and experimental results. Thus, such a model could be used to determine the critical characteristics of a microstructure prior to fabrication to prevent adhesion and lower friction in terms of surface roughness, mechanical properties, and environmental conditions.