The spin transfer torque is essential for electrical magnetization switching. When a magnetic domain wall is driven by an electric current through an adiabatic spin torque, the theory predicts a threshold current even for a perfect wire without any extrinsic pinning. The experimental confirmation of this 'intrinsic pinning', however, has long been missing. Here, we give evidence that this intrinsic pinning determines the threshold, and thus that the adiabatic spin torque dominates the domain wall motion in a perpendicularly magnetized Co/Ni nanowire. The intrinsic nature manifests itself both in the field-independent threshold current and in the presence of its minimum on tuning the wire width. The demonstrated domain wall motion purely due to the adiabatic spin torque will serve to achieve robust operation and low energy consumption in spintronic devices.

Crystallization processes were studied for germanium–antimony–tellurium (Ge–Sb–Te) ternary amorphous thin film as a single layer or sandwiched between various dielectric films, such as silicon dioxide (SiO2), siricon nitride (Si3N4), tantalum oxide (Ta2O5), zinc sulfide (ZnS), and ZnS–20 mol % SiO2. The processes were analyzed quantitatively, based on transmittance changes in Ge–Sb–Te films heated either exothermally or isothermally. Both Kissinger equation and Johnson–Mehl–Avrami kinetic analysis were adopted to estimate activation energy and the reaction order of the processes. Ge–Sb–Te single-layer amorphous film crystallized in two stages, nucleation and crystal growth. These two processes can be distinguished by exothermal crystallization patterns. By sandwiching this film into dielectric films, crystallization activation energy increases and the nucleation processes are affected. The Si3N4 and Ta2O5 dielectric films accelerate the nucleation, while the SiO2 films inhibit it, and the ZnS and ZnS–20 mol % SiO2 films promote the nucleation even in the grain growth process. Wettability measurements indicate that surface reactivity and chemical affinity are the factors which produce this variation.

Current driven domain wall motion in nanostrips with perpendicular magnetic anisotropy was analyzed by using micromagnetic simulation. The threshold current density of perpendicular anisotropy strips in adiabatic approximation was much smaller than that of in-plane anisotropy strips, and it reduced with thickness reduction. The differences originate from the differences in domain wall width and hard-axis anisotropy. Also, the threshold current density of perpendicular anisotropy strips required to depin from a pinning site was quite small although the threshold field of the strips was sufficiently large relative to those of in-plane anisotropy strips.

All-electrical control and local detection of multiple magnetic domain walls in perpendicularly magnetized Co/Ni nano-wires were demonstrated. A series of domain walls was reproducibly shifted in the same direction by the current, keeping the distance between the walls almost the same. Furthermore, the walls can be shifted back and forth depending on the direction of the pulsed currents.

The authors show experimental results on domain wall motion induced by electric current in a Co/Ni nano-wire with perpendicular magnetic anisotropy. The motion was detected electrically by using the anomalous Hall effect. Threshold current density for the domain wall motion was found to decrease with decreasing the wire width, where the minimum threshold current density of approximately 5×1011 A/m2 was observed for the wire width of 70 nm.