We investigate a practical semi-autonomous power distribution line maintenance robot system which performs job with task level directions that are, for examples, "Install a switch gear", "Remove the high voltage insulator", "Peel the coating off a cable", and so on. The maintenance tasks are now done by human operators above electric poles.
ELFIN (aevated Field msulator) process for device isolation and SEP (Source/Drain Elevated by poly-Si Plugging) process for elevated S/D structure is developed for ultra-thin SO1 MOSFETs with SO1 film less than 20 nm. With ELFIN process, gate electric field at SO1 edge is negligible due to no wrapped-around of SO1 edge by poly-Si gate so that reverse narrow channel effect of NMOSFET is improved by about 50 %, gate leakage current decreased by about 30 %, and hot-carrier immunity increased by about 20 %. With SEP process, elevated S/D region with 60 nm thick is obtained so that S/D resistance is deceased to a third and has excellent uniformity over a wafer.
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