Vertical GaN Schottky barrier diodes (SBDs) were fabricated on freestanding GaN substrates with low dislocation density. High quality n-GaN drift-layer with an electron mobility of 930 cm2 V-1 s-1 was obtained by optimizing the growth conditions by reducing the intensity of yellow luminescence using conventional photoluminescence measurements. The specific on-resistance (RonA) and the breakdown voltage (VB) of the SBDs were 0.71 mΩ cm2 and over 1100 V, respectively. The figure of merit (VB2/RonA) was 1.7 GW/cm2, which is the highest value among previously reported SBDs for both GaN and SiC.

We observed that Faraday waves are parametrically generated on a free surface of superfluid 4He when a sample cell is vibrated vertically. Standing-wave patterns appear on the surface, and their frequencies are one-half the driving frequency. We observed clear threshold amplitudes of the vibration for the instability. The difference in the threshold between the superfluid and the normal fluid is explained by a wall damping.

Novel vertical heterojunction field-effect transistors (VHFETs) with re-grown AlGaN/GaN two-dimensional electron gas (2DEG) channels on free-standing GaN substrates have been developed. The VHFETs exhibited a specific on-resistance (RonA) of 7.6 mΩ cm2 at a threshold voltage (VTH) of -1.1 V and a breakdown voltage (VB) of 672 V. The breakdown voltage and the figure of merit (VB2/RonA) are the highest among those of the GaN-based vertical transistors ever reported. It was demonstrated that the threshold voltage can be controlled by the thickness of AlGaN layers and a normally-off operation was achieved with a 10-nm-thick Al0.2Ga0.8N layer.

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