Copper-doped ZnO (ZnO:Cu) films were prepared on silicon substrates by filtered cathodic vacuum arc technique at room temperature using a Zn target containing 5at.% of Cu. Room temperature ferromagnetism was observed in the ZnO:Cu films with saturation magnetization of 0.037μB∕Cu atom. The origin of the ferromagnetism in ZnO:Cu was mainly due to Cu ions substituted into the ZnO lattice. X-ray diffraction, x-ray photoelectron spectroscopy, and transmission electron microscopy revealed that no ferromagnetic-related secondary phase could be detected in ZnO:Cu.

No abstract

Diamond like carbon (DLC) films have attracted increasing attention in a variety of industries due to their excellent mechanical and chemical properties. To meet the demands from the emerging industries, such as micro electro mechanical systems (MEMS), a considerable number of research studies have been conducted to advance the technology for thin DLC films fabrication. However, it has been reported that the properties of DLC films vary with thickness, which necessitate further understanding of the mechanism of initial film growth. To elucidate the mechanism of carbon film growth, the present study employs X-ray photoelectron spectroscopy (XPS) to characterize two types of amorphous carbon films fabricated by cathodic vacuum arc discharge and radio-frequency magnetron sputtering. The results indicated that wide range of energy distribution of carbon ions in the cathodic arc discharge caused a decline in the sp 3 ratio with decreasing thicknesses.

No abstract

No abstract