2004
DOI: 10.1016/j.tsf.2003.09.033
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Characteristics of indium tin oxide thin films prepared using electron beam evaporation

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Cited by 66 publications
(44 citation statements)
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“…The XPS spectra show binding energies of 444.8 eV for In ͑3d͒, 486.9 eV for Sn ͑3d͒ and two values, 530.3 and 531.9 eV for O ͑1s͒, in agreement with previously reported results in different indium tin oxide systems. 2,5,16,17 The relative intensities of the two O ͑1s͒ components depend on the region probed, being the 531.9 eV component more intense in regions with high In concentration. This is shown in the XPS spectra of Fig.…”
Section: -3mentioning
confidence: 99%
“…The XPS spectra show binding energies of 444.8 eV for In ͑3d͒, 486.9 eV for Sn ͑3d͒ and two values, 530.3 and 531.9 eV for O ͑1s͒, in agreement with previously reported results in different indium tin oxide systems. 2,5,16,17 The relative intensities of the two O ͑1s͒ components depend on the region probed, being the 531.9 eV component more intense in regions with high In concentration. This is shown in the XPS spectra of Fig.…”
Section: -3mentioning
confidence: 99%
“…Spin orbital splittings of a core level of a particular element in different compounds are nearly the same, and so it happens with peak area ratios. This is characteristic of ITO, as some references in the literature show [34,35].…”
Section: X-ray Photoelectron Spectroscopymentioning
confidence: 76%
“…They deposited them using spray pyrolysis following the method developed by Kavan and Grätzel [6]. Single layer deposition techniques have been reported for the ITO [7][8][9] and TiO 2 films [10][11][12]. In this work, we report on the successful deposition of single and multilayer of ITO and anatase TiO 2 using RPLAD technique.…”
Section: Introductionmentioning
confidence: 99%