Channel stress induced by NiPt-silicide films in metal–oxide–semiconductor field-effect transistors (MOSFETs) was demonstrated using UV-Raman spectroscopy, and its generation mechanism was revealed. It was possible to accurately measure the channel stress with the Raman test structure. The channel stress depends on the source/drain doping type and the second silicide annealing method. In order to discuss the channel stress generation mechanism, NiPt-silicide microstructure analyses were performed using X-ray diffraction analysis and scanning transmission electron microscopy. The channel stress generation mechanism can be elucidated by the following two factors: the change in the NiSi lattice spacing, which depends on the annealing temperature, and the NiSi crystal orientation. The analyses of these factors are important for controlling channel stress in stress engineering for high-performance transistors.
The problem of Aharonov-Bohm scattering on parallel flux lines of the same magnitude is solved exactly and the differential cross section is calculated.
Silicon nitride films (p-SiN) with different high stresses were formed by changing the monosilane-to-ammonia source gas ratio, RF power, and deposition temperature in a conventional plasma-enhanced chemical vapor deposition (PECVD). PECVD was used to deposit p-SiN films with high-stresses because it can flexibly change the stress of the film to be formed from tensile to compressive direction. The formed films were analyzed by Fourier transform-infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), nanoindentation, and positron-beam annihilation to obtain data on local bonding structure, mechanical properties and the behavior of vacancies in the p-SiN films. In this study, to clarify the local bonding structure of high stress SiN films, we investigated p-SiN films with and without ultraviolet (UV) curing that is effective in tensile stress. It has been confirmed that total hydrogen (Si{H þ N{H) concentration decreases with increasing film stress of p-SiN films. It has been found that UV curing promotes Si-N-Si crosslinking due to dehydrogenization, leading to the formation of a stoichiometric silicon nitride, Si 3 N 4 , network structure, and the vacancies in the p-SiN films shrink during UV curing. Finally, we proposed a structural model for the local bonding arrangement in p-SiN films with UV curing.
The drift waves in rotating toroidal plasma are studied for an axisymmetric, large-aspect-ratio tokamak with concentric and circular magnetic surfaces. Plasma rotation is driven by the radial electrostatic ¢eld typical for the H con¢nement mode of plasma in tokamaks. Low-frequency electrostatic oscillations of low-beta plasma are considered in assumptions of adiabatic electrons and plasma quasineutrality. In order to describe drift oscillations in the plasma edge region, where the radial electric ¢eld and plasma rotation velocity are high, a weak coupling approximation that takes into account the toroidal coupling of normal modes centred on the neighbouring rational surfaces is considered. The derived eigenmode equation of the Weber type has two classes of solutions giving either marginally stable global drift modes or propagating drift waves which experience shear damping. The analytical dispersion equations, for both global and propagating drift waves are derived and the simple dispersion relations for some limiting cases are determined.*
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