Evaluation of Strain in Si-on-Insulator Substrate Induced by Si₃N₄ Capping Film

Abstract

The drift waves in rotating toroidal plasma are studied for an axisymmetric, large-aspect-ratio tokamak with concentric and circular magnetic surfaces. Plasma rotation is driven by the radial electrostatic ¢eld typical for the H con¢nement mode of plasma in tokamaks. Low-frequency electrostatic oscillations of low-beta plasma are considered in assumptions of adiabatic electrons and plasma quasineutrality. In order to describe drift oscillations in the plasma edge region, where the radial electric ¢eld and plasma rotation velocity are high, a weak coupling approximation that takes into account the toroidal coupling of normal modes centred on the neighbouring rational surfaces is considered. The derived eigenmode equation of the Weber type has two classes of solutions giving either marginally stable global drift modes or propagating drift waves which experience shear damping. The analytical dispersion equations, for both global and propagating drift waves are derived and the simple dispersion relations for some limiting cases are determined.*

Evaluation of local strain in Si using UV-Raman spectroscopy

“…The buried oxide (BOX) in the SOI substrates deformed (compressed in the present case) more than Si; therefore, SOI film on the BOX layer was more strained than that on Cz-Si [38]. We have also verified that thinner SOIs were strained more effectively than thicker ones [39].…”

“…Instead, the induced strain or partial deformation may be spatially confined and may be relaxed or even cancelled by the opposite strain in the uncovered area, as is schematically illustrated in Fig. 5 [10,39]. The existence of the free surface may be responsible for the mechanism to appear.…”

Channel Strain Measurement in 32-nm-Node Complementary Metal–Oxide–Semiconductor Field-Effect Transistor by Raman Spectroscopy

“…Stress measurement was performed using a Raman spectroscopy system equipped with a UV argon ion laser ( ¼ 363:8 nm), whose penetration depth into Si is approximately 5 nm. 12,13,17) Raman measurement was performed at room temperature in backscattering geometry from the (001) silicon wafer surface. Incident light was polarized along the h110i direction.…”

Exploring the detection limits of infrared near-field microscopy regarding small buried structures and pushing them by exploiting superlens-related effects

“…Another important application are nanoelectronic devices that are often covered by dielectric capping layers such as SiO 2 or Si 3 N 4 in order to e.g. prevent them from oxidation [30,31].…”